Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.

A. Alessi; I. Reghioua; S. Girard; S. Agnello; D. Di Francesca; L. Martin-Samos; C. Marcandella; N. Richard; M. Cannas; A. Boukenter; Y. Ouerdane

doi:10.1088/1757-899X/169/1/012008

Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.

A. Alessi
, I. Reghioua
, S. Girard
, S. Agnello
, D. Di Francesca
, L. Martin-Samos
, C. Marcandella
, N. Richard
, M. Cannas
, A. Boukenter
, Y. Ouerdane

Laboratoire Hubert Curien UMR CNRS 5516
University of Palermo
CEA/UVSQ/CNRS
University of Nova Gorica

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO₂)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with the one of the red emission we can exclude that this emission is originated by the Ge(1).

langue originale	Anglais
Numéro d'article	012008
journal	IOP Conference Series: Materials Science and Engineering
Volume	169
Numéro de publication	1
Les DOIs	https://doi.org/10.1088/1757-899X/169/1/012008
état	Publié - 16 févr. 2017
Modification externe	Oui
Evénement	2016 International Conference on Defects in Insulating Materials, ICDIM 2016 - Lyon, France Durée: 10 juil. 2016 → 15 juil. 2016

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10.1088/1757-899X/169/1/012008

Contient cette citation

Alessi, A., Reghioua, I., Girard, S., Agnello, S., Di Francesca, D., Martin-Samos, L., Marcandella, C., Richard, N., Cannas, M., Boukenter, A., & Ouerdane, Y. (2017). Irradiation temperature effects on the induced point defects in Ge-doped optical fibers. IOP Conference Series: Materials Science and Engineering, 169(1), Article 012008. https://doi.org/10.1088/1757-899X/169/1/012008

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title = "Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.",

abstract = "We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO2)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with the one of the red emission we can exclude that this emission is originated by the Ge(1).",

author = "A. Alessi and I. Reghioua and S. Girard and S. Agnello and \{Di Francesca\}, D. and L. Martin-Samos and C. Marcandella and N. Richard and M. Cannas and A. Boukenter and Y. Ouerdane",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 2016 International Conference on Defects in Insulating Materials, ICDIM 2016 ; Conference date: 10-07-2016 Through 15-07-2016",

year = "2017",

month = feb,

day = "16",

doi = "10.1088/1757-899X/169/1/012008",

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journal = "IOP Conference Series: Materials Science and Engineering",

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Alessi, A, Reghioua, I, Girard, S, Agnello, S, Di Francesca, D, Martin-Samos, L, Marcandella, C, Richard, N, Cannas, M, Boukenter, A & Ouerdane, Y 2017, 'Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.', IOP Conference Series: Materials Science and Engineering, VOL. 169, Numéro 1, 012008. https://doi.org/10.1088/1757-899X/169/1/012008

TY - JOUR

T1 - Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.

AU - Alessi, A.

AU - Reghioua, I.

AU - Girard, S.

AU - Agnello, S.

AU - Di Francesca, D.

AU - Martin-Samos, L.

AU - Marcandella, C.

AU - Richard, N.

AU - Cannas, M.

AU - Boukenter, A.

AU - Ouerdane, Y.

PY - 2017/2/16

Y1 - 2017/2/16

N2 - We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO2)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with the one of the red emission we can exclude that this emission is originated by the Ge(1).

AB - We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO2)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with the one of the red emission we can exclude that this emission is originated by the Ge(1).

U2 - 10.1088/1757-899X/169/1/012008

DO - 10.1088/1757-899X/169/1/012008

M3 - Conference article

AN - SCOPUS:85016449842

SN - 1757-8981

VL - 169

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012008

T2 - 2016 International Conference on Defects in Insulating Materials, ICDIM 2016

Y2 - 10 July 2016 through 15 July 2016

ER -

Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.

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