Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

A. S. Abramov; A. I. Kosarev; P. Roca i Cabarrocas; A. J. Vinogradov

doi:10.1557/proc-420-659

Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

A. S. Abramov
, A. I. Kosarev
, P. Roca i Cabarrocas
, A. J. Vinogradov

Ioffe Institute

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

Concomitant studies of kinetics of defects N_D(t), photoconductivity δ_ph(t), electron and hole diffusion lengths L_e(t), L_h(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to N_d(t), σ_ph(t) and L_e(t), the hole diffusion length L_h(t) was observed to remain constant during initial time (approx.10³s) and then decreased with characteristic time approx. 10⁴s.

langue originale	Anglais
Pages (de - à)	659-664
Nombre de pages	6
journal	Materials Research Society Symposium - Proceedings
Volume	420
Les DOIs	https://doi.org/10.1557/proc-420-659
état	Publié - 1 janv. 1996
Modification externe	Oui
Evénement	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Durée: 8 avr. 1996 → 12 avr. 1996

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title = "Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films",

abstract = "Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.",

author = "Abramov, \{A. S.\} and Kosarev, \{A. I.\} and \{Roca i Cabarrocas\}, P. and Vinogradov, \{A. J.\}",

year = "1996",

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doi = "10.1557/proc-420-659",

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TY - JOUR

T1 - Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

AU - Abramov, A. S.

AU - Kosarev, A. I.

AU - Roca i Cabarrocas, P.

AU - Vinogradov, A. J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.

AB - Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.

UR - https://www.scopus.com/pages/publications/0030379508

U2 - 10.1557/proc-420-659

DO - 10.1557/proc-420-659

M3 - Conference article

AN - SCOPUS:0030379508

SN - 0272-9172

VL - 420

SP - 659

EP - 664

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

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