Laser diodes for gas sensing emitting at 3.06 μm at room temperature

Sofiane Belahsene; Lars Naehle; Marc Fischer; Johannes Koeth; Guilhem Boissier; Pierre Grech; Grégoire Narcy; Aurore Vicet; Yves Rouillard

doi:10.1109/LPT.2010.2049989

Laser diodes for gas sensing emitting at 3.06 μm at room temperature

Sofiane Belahsene
, Lars Naehle
, Marc Fischer
, Johannes Koeth
, Guilhem Boissier
, Pierre Grech
, Grégoire Narcy
, Aurore Vicet
, Yves Rouillard

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Type-I quantum-well laser diodes with an active region constituted of GaInAsSbAlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm² at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.

langue originale	Anglais
Numéro d'article	5466105
Pages (de - à)	1084-1086
Nombre de pages	3
journal	IEEE Photonics Technology Letters
Volume	22
Numéro de publication	15
Les DOIs	https://doi.org/10.1109/LPT.2010.2049989
état	Publié - 9 juil. 2010
Modification externe	Oui

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10.1109/LPT.2010.2049989

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title = "Laser diodes for gas sensing emitting at 3.06 μm at room temperature",

abstract = "Type-I quantum-well laser diodes with an active region constituted of GaInAsSbAlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.",

keywords = "Distributed-feedback (DFB) lasers, quantum-well (QW) lasers, semiconductor lasers, spectroscopy",

author = "Sofiane Belahsene and Lars Naehle and Marc Fischer and Johannes Koeth and Guilhem Boissier and Pierre Grech and Gr{\'e}goire Narcy and Aurore Vicet and Yves Rouillard",

year = "2010",

month = jul,

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doi = "10.1109/LPT.2010.2049989",

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TY - JOUR

T1 - Laser diodes for gas sensing emitting at 3.06 μm at room temperature

AU - Belahsene, Sofiane

AU - Naehle, Lars

AU - Fischer, Marc

AU - Koeth, Johannes

AU - Boissier, Guilhem

AU - Grech, Pierre

AU - Narcy, Grégoire

AU - Vicet, Aurore

AU - Rouillard, Yves

PY - 2010/7/9

Y1 - 2010/7/9

N2 - Type-I quantum-well laser diodes with an active region constituted of GaInAsSbAlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.

AB - Type-I quantum-well laser diodes with an active region constituted of GaInAsSbAlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.

KW - Distributed-feedback (DFB) lasers

KW - quantum-well (QW) lasers

KW - semiconductor lasers

KW - spectroscopy

UR - https://www.scopus.com/pages/publications/77954253370

U2 - 10.1109/LPT.2010.2049989

DO - 10.1109/LPT.2010.2049989

M3 - Article

AN - SCOPUS:77954253370

SN - 1041-1135

VL - 22

SP - 1084

EP - 1086

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

M1 - 5466105

ER -

Laser diodes for gas sensing emitting at 3.06 μm at room temperature

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