Laser-induced exciton splitting

M. Joffre; D. Hulin; A. Migus; M. Combescot

doi:10.1103/PhysRevLett.62.74

Laser-induced exciton splitting

M. Joffre
, D. Hulin
, A. Migus
, M. Combescot

Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique
PSL research University & IPSL

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.

langue originale	Anglais
Pages (de - à)	74-77
Nombre de pages	4
journal	Physical Review Letters
Volume	62
Numéro de publication	1
Les DOIs	https://doi.org/10.1103/PhysRevLett.62.74
état	Publié - 1 janv. 1989

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10.1103/PhysRevLett.62.74

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abstract = "A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.",

author = "M. Joffre and D. Hulin and A. Migus and M. Combescot",

year = "1989",

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AB - A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.

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JO - Physical Review Letters

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Laser-induced exciton splitting

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