Light-induced defect creation in hydrogenated polymorphous silicon

K. Morigaki; K. Takeda; H. Hikita; P. Roca I Cabarrocas

doi:10.1016/j.mseb.2005.02.064

Light-induced defect creation in hydrogenated polymorphous silicon

K. Morigaki
, K. Takeda
, H. Hikita
, P. Roca I Cabarrocas

Hiroshima Institute of Technology
Electro-Chemical and Cancer Institute
Meikai University

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 °C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films.

langue originale	Anglais
Pages (de - à)	34-41
Nombre de pages	8
journal	Materials Science and Engineering: B
Volume	121
Numéro de publication	1-2
Les DOIs	https://doi.org/10.1016/j.mseb.2005.02.064
état	Publié - 25 juil. 2005

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@article{36012b48e1d94397ba83bcf470f6e198,

title = "Light-induced defect creation in hydrogenated polymorphous silicon",

abstract = "Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 °C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films.",

keywords = "Defects, Electron paramagnetic resonance, Polymorphous silicon, Semiconductors",

author = "K. Morigaki and K. Takeda and H. Hikita and \{Roca I Cabarrocas\}, P.",

year = "2005",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2005.02.064",

language = "English",

volume = "121",

pages = "34--41",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

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TY - JOUR

T1 - Light-induced defect creation in hydrogenated polymorphous silicon

AU - Morigaki, K.

AU - Takeda, K.

AU - Hikita, H.

AU - Roca I Cabarrocas, P.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 °C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films.

AB - Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 °C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films.

KW - Defects

KW - Electron paramagnetic resonance

KW - Polymorphous silicon

KW - Semiconductors

U2 - 10.1016/j.mseb.2005.02.064

DO - 10.1016/j.mseb.2005.02.064

M3 - Article

AN - SCOPUS:19344373706

SN - 0921-5107

VL - 121

SP - 34

EP - 41

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-2

ER -

Light-induced defect creation in hydrogenated polymorphous silicon

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