Local structure of the DX center in AlGaAs: results from positron spectroscopy

T. Laine; J. Makinen; K. Saarinen; P. Hautojarvi; C. Corbel; P. Gibart

doi:10.4028/www.scientific.net/msf.196-201.1073

Local structure of the DX center in AlGaAs: results from positron spectroscopy

T. Laine
, J. Makinen
, K. Saarinen
, P. Hautojarvi
, C. Corbel
, P. Gibart

Aalto University

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

2 Citations (Scopus)

Résumé

The positron annihilation method was used to investigate the DX(Si) and DX(Te) centers in n-type AlGaAs. A vacancy defect is observed in the ground state of the DX centers. The vacancy signal disappears in shallow donor state reached at low temperatures by illuminating the sample. The size of the vacancy is smaller compared with isolated As and Ga vacancies. Our results are in good agreement with the vacancy-interstitial model of the DX center.

langue originale	Anglais
Pages (de - à)	1073-1078
Nombre de pages	6
journal	Materials Science Forum
Volume	196-201
Numéro de publication	pt 2
Les DOIs	https://doi.org/10.4028/www.scientific.net/msf.196-201.1073
état	Publié - 1 janv. 1995
Modification externe	Oui
Evénement	Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Durée: 23 juil. 1995 → 28 juil. 1995

Accès au document

10.4028/www.scientific.net/msf.196-201.1073

Contient cette citation

@article{51629949577e4c9088f5d499cb825649,

title = "Local structure of the DX center in AlGaAs: results from positron spectroscopy",

abstract = "The positron annihilation method was used to investigate the DX(Si) and DX(Te) centers in n-type AlGaAs. A vacancy defect is observed in the ground state of the DX centers. The vacancy signal disappears in shallow donor state reached at low temperatures by illuminating the sample. The size of the vacancy is smaller compared with isolated As and Ga vacancies. Our results are in good agreement with the vacancy-interstitial model of the DX center.",

author = "T. Laine and J. Makinen and K. Saarinen and P. Hautojarvi and C. Corbel and P. Gibart",

year = "1995",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/msf.196-201.1073",

language = "English",

volume = "196-201",

pages = "1073--1078",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "pt 2",

note = "Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) ; Conference date: 23-07-1995 Through 28-07-1995",

}

TY - JOUR

T1 - Local structure of the DX center in AlGaAs

T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)

AU - Laine, T.

AU - Makinen, J.

AU - Saarinen, K.

AU - Hautojarvi, P.

AU - Corbel, C.

AU - Gibart, P.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The positron annihilation method was used to investigate the DX(Si) and DX(Te) centers in n-type AlGaAs. A vacancy defect is observed in the ground state of the DX centers. The vacancy signal disappears in shallow donor state reached at low temperatures by illuminating the sample. The size of the vacancy is smaller compared with isolated As and Ga vacancies. Our results are in good agreement with the vacancy-interstitial model of the DX center.

AB - The positron annihilation method was used to investigate the DX(Si) and DX(Te) centers in n-type AlGaAs. A vacancy defect is observed in the ground state of the DX centers. The vacancy signal disappears in shallow donor state reached at low temperatures by illuminating the sample. The size of the vacancy is smaller compared with isolated As and Ga vacancies. Our results are in good agreement with the vacancy-interstitial model of the DX center.

U2 - 10.4028/www.scientific.net/msf.196-201.1073

DO - 10.4028/www.scientific.net/msf.196-201.1073

M3 - Conference article

AN - SCOPUS:0029546297

SN - 0255-5476

VL - 196-201

SP - 1073

EP - 1078

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 2

Y2 - 23 July 1995 through 28 July 1995

ER -

Local structure of the DX center in AlGaAs: results from positron spectroscopy

Résumé

Accès au document

Empreinte digitale

Contient cette citation