Low cast 1300 nm edge emitter laser

B. Thedrez

Low cast 1300 nm edge emitter laser

B. Thedrez

Opto+-GIE

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

The laser emitting at 1300 nm suitable for market demand up to several Ghz repetition rates are discussed. Various methods are employed to lower the cost of these lasers. Research was done in the field of high temperature behavior, beam expander lasers, sensitivity to feedback and device packaging. The elimination of optical isolators and development of GaAs wafers alreday provides opportunity of 1.3 μm low cost devices.

langue originale	Anglais
Pages (de - à)	453-454
Nombre de pages	2
journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
état	Publié - 1 déc. 2001
Modification externe	Oui
Evénement	14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, États-Unis Durée: 11 nov. 2001 → 15 nov. 2001

Contient cette citation

@article{4d04213c77df431aab701ff1dcc02338,

title = "Low cast 1300 nm edge emitter laser",

abstract = "The laser emitting at 1300 nm suitable for market demand up to several Ghz repetition rates are discussed. Various methods are employed to lower the cost of these lasers. Research was done in the field of high temperature behavior, beam expander lasers, sensitivity to feedback and device packaging. The elimination of optical isolators and development of GaAs wafers alreday provides opportunity of 1.3 μm low cost devices.",

author = "B. Thedrez",

year = "2001",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "453--454",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

note = "14th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 11-11-2001 Through 15-11-2001",

}

TY - JOUR

T1 - Low cast 1300 nm edge emitter laser

AU - Thedrez, B.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The laser emitting at 1300 nm suitable for market demand up to several Ghz repetition rates are discussed. Various methods are employed to lower the cost of these lasers. Research was done in the field of high temperature behavior, beam expander lasers, sensitivity to feedback and device packaging. The elimination of optical isolators and development of GaAs wafers alreday provides opportunity of 1.3 μm low cost devices.

AB - The laser emitting at 1300 nm suitable for market demand up to several Ghz repetition rates are discussed. Various methods are employed to lower the cost of these lasers. Research was done in the field of high temperature behavior, beam expander lasers, sensitivity to feedback and device packaging. The elimination of optical isolators and development of GaAs wafers alreday provides opportunity of 1.3 μm low cost devices.

M3 - Conference article

AN - SCOPUS:0035651753

SN - 1092-8081

VL - 2

SP - 453

EP - 454

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 11 November 2001 through 15 November 2001

ER -

Low cast 1300 nm edge emitter laser

Résumé

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Contient cette citation