Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates

R. Cariou; I. Massiot; R. Ruggeri; N. Ramay; J. Tang; A. Cattoni; S. Collin; J. Nassar; P. Roca I Cabarrocas

doi:10.1109/PVSC.2013.6744294

Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates

R. Cariou
, I. Massiot
, R. Ruggeri
, N. Ramay
, J. Tang
, A. Cattoni
, S. Collin
, J. Nassar
, P. Roca I Cabarrocas

LETI (CEA-Technologies Avancees)
Institut polytechnique de Paris
CNRS
CNR-IMM

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

2 Citations (Scopus)

Résumé

A standard RF-PECVD reactor is used to grow epitaxial SiGe layers at 175°C on c-Si (100) substrates. By adding GeH₄ to SiH ₄/H₂ plasmas, we show for the first time epitaxial SiGe alloys with Ge atomic fraction up to 35% grown at such low temperature. Few μm thick layers are used as an absorber in the wafer equivalent approach: thin film c-Si(p++)/epi-Si_1-xGe_x/a-Si:H(n+) heterojunction solar cells are fabricated. Structural and electronic properties of these materials are investigated using Ellipsometry, Raman, TEM, J(V) characteristics and EQE. Simulations of device structure are performed with PC1D. Stress induced lift off enables detachment and transfer of ultra-thin Si layers of 1 cm ², on inexpensive substrate. Crystal quality is not affected by the transfer process, and first proof of concept of PECVD epitaxial ultrathin transferred solar diode is obtained.

langue originale	Anglais
titre	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	921-926
Nombre de pages	6
ISBN (imprimé)	9781479932993
Les DOIs	https://doi.org/10.1109/PVSC.2013.6744294
état	Publié - 1 janv. 2013
Evénement	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, États-Unis Durée: 16 juin 2013 → 21 juin 2013

Série de publications

Nom	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (imprimé)	0160-8371

Une conférence

Une conférence	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Pays/Territoire	États-Unis
La ville	Tampa, FL
période	16/06/13 → 21/06/13

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2013.6744294

Contient cette citation

Cariou, R., Massiot, I., Ruggeri, R., Ramay, N., Tang, J., Cattoni, A., Collin, S., Nassar, J., & Roca I Cabarrocas, P. (2013). Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates. Dans 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (p. 921-926). Article 6744294 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744294

Cariou, R. ; Massiot, I. ; Ruggeri, R. et al. / Low-temperature SiGe PECVD epitaxy : From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 921-926 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{8f32efbbd6a94991a3d16d4e014188cb,

title = "Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates",

abstract = "A standard RF-PECVD reactor is used to grow epitaxial SiGe layers at 175°C on c-Si (100) substrates. By adding GeH4 to SiH 4/H2 plasmas, we show for the first time epitaxial SiGe alloys with Ge atomic fraction up to 35\% grown at such low temperature. Few μm thick layers are used as an absorber in the wafer equivalent approach: thin film c-Si(p++)/epi-Si1-xGex/a-Si:H(n+) heterojunction solar cells are fabricated. Structural and electronic properties of these materials are investigated using Ellipsometry, Raman, TEM, J(V) characteristics and EQE. Simulations of device structure are performed with PC1D. Stress induced lift off enables detachment and transfer of ultra-thin Si layers of 1 cm 2, on inexpensive substrate. Crystal quality is not affected by the transfer process, and first proof of concept of PECVD epitaxial ultrathin transferred solar diode is obtained.",

keywords = "HIT solar cell, Low temperature SiGe epitaxy, Photovoltaic cells, RF-PECVD, Thin film crystalline layer, Transfer on low cost substrate",

author = "R. Cariou and I. Massiot and R. Ruggeri and N. Ramay and J. Tang and A. Cattoni and S. Collin and J. Nassar and \{Roca I Cabarrocas\}, P.",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/PVSC.2013.6744294",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "921--926",

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note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

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Cariou, R, Massiot, I, Ruggeri, R, Ramay, N, Tang, J, Cattoni, A, Collin, S, Nassar, J & Roca I Cabarrocas, P 2013, Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates. Dans 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744294, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., p. 921-926, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, États-Unis, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744294

Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates. / Cariou, R.; Massiot, I.; Ruggeri, R. et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 921-926 6744294 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Low-temperature SiGe PECVD epitaxy

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

AU - Cariou, R.

AU - Massiot, I.

AU - Ruggeri, R.

AU - Ramay, N.

AU - Tang, J.

AU - Cattoni, A.

AU - Collin, S.

AU - Nassar, J.

AU - Roca I Cabarrocas, P.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A standard RF-PECVD reactor is used to grow epitaxial SiGe layers at 175°C on c-Si (100) substrates. By adding GeH4 to SiH 4/H2 plasmas, we show for the first time epitaxial SiGe alloys with Ge atomic fraction up to 35% grown at such low temperature. Few μm thick layers are used as an absorber in the wafer equivalent approach: thin film c-Si(p++)/epi-Si1-xGex/a-Si:H(n+) heterojunction solar cells are fabricated. Structural and electronic properties of these materials are investigated using Ellipsometry, Raman, TEM, J(V) characteristics and EQE. Simulations of device structure are performed with PC1D. Stress induced lift off enables detachment and transfer of ultra-thin Si layers of 1 cm 2, on inexpensive substrate. Crystal quality is not affected by the transfer process, and first proof of concept of PECVD epitaxial ultrathin transferred solar diode is obtained.

AB - A standard RF-PECVD reactor is used to grow epitaxial SiGe layers at 175°C on c-Si (100) substrates. By adding GeH4 to SiH 4/H2 plasmas, we show for the first time epitaxial SiGe alloys with Ge atomic fraction up to 35% grown at such low temperature. Few μm thick layers are used as an absorber in the wafer equivalent approach: thin film c-Si(p++)/epi-Si1-xGex/a-Si:H(n+) heterojunction solar cells are fabricated. Structural and electronic properties of these materials are investigated using Ellipsometry, Raman, TEM, J(V) characteristics and EQE. Simulations of device structure are performed with PC1D. Stress induced lift off enables detachment and transfer of ultra-thin Si layers of 1 cm 2, on inexpensive substrate. Crystal quality is not affected by the transfer process, and first proof of concept of PECVD epitaxial ultrathin transferred solar diode is obtained.

KW - HIT solar cell

KW - Low temperature SiGe epitaxy

KW - Photovoltaic cells

KW - RF-PECVD

KW - Thin film crystalline layer

KW - Transfer on low cost substrate

U2 - 10.1109/PVSC.2013.6744294

DO - 10.1109/PVSC.2013.6744294

M3 - Conference contribution

AN - SCOPUS:84896472188

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 921

EP - 926

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 16 June 2013 through 21 June 2013

ER -

Cariou R, Massiot I, Ruggeri R, Ramay N, Tang J, Cattoni A et al. Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates. Dans 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 921-926. 6744294. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744294

Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates

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Une conférence

SDG des Nations Unies

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