Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

D. Zhou; R. Piron; M. Dontabactouny; O. Dehaese; F. Grillot; T. Batte; K. Tavernier; J. Even; S. Loualiche

doi:10.1049/el:20093066

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

D. Zhou
, R. Piron
, M. Dontabactouny
, O. Dehaese
, F. Grillot
, T. Batte
, K. Tavernier
, J. Even
, S. Loualiche

Institut FOTON-UMR6082
Norwegian University of Science and Technology

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm² (∼45A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

langue originale	Anglais
Pages (de - à)	50-51
Nombre de pages	2
journal	Electronics Letters
Volume	45
Numéro de publication	1
Les DOIs	https://doi.org/10.1049/el:20093066
état	Publié - 1 janv. 2009
Modification externe	Oui

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10.1049/el:20093066

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abstract = "Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.",

author = "D. Zhou and R. Piron and M. Dontabactouny and O. Dehaese and F. Grillot and T. Batte and K. Tavernier and J. Even and S. Loualiche",

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AU - Zhou, D.

AU - Piron, R.

AU - Dontabactouny, M.

AU - Dehaese, O.

AU - Grillot, F.

AU - Batte, T.

AU - Tavernier, K.

AU - Even, J.

AU - Loualiche, S.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

AB - Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

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DO - 10.1049/el:20093066

M3 - Article

AN - SCOPUS:58049128970

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JO - Electronics Letters

JF - Electronics Letters

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Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

Résumé

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