@inproceedings{b52b971152474f169272200250c9cfdd,
title = "Low threshold current density InAs quantum dash lasers on InP using double cap technique",
abstract = "Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm2 (∼ 45 A/cm2 per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.",
keywords = "Molecular beam epitaxy, Quantum dash laser",
author = "D. Zhou and Fimland, \{B. O.\} and R. Piron and O. Dehaese and F. Grillot and S. Loualiche",
year = "2009",
month = dec,
day = "1",
language = "English",
isbn = "189358013X",
series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
note = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 ; Conference date: 18-05-2009 Through 21-05-2009",
}