Magnetic tunnel junction applications

Nilson Maciel; Elaine Marques; Lírida Naviner; Yongliang Zhou; Hao Cai

doi:10.3390/s20010121

Magnetic tunnel junction applications

Nilson Maciel
, Elaine Marques
, Lírida Naviner
, Yongliang Zhou
, Hao Cai

CNRS LTCI
Southeast University

Résultats de recherche: Contribution à un journal › Article de révision › Revue par des pairs

Résumé

Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.

langue originale	Anglais
Numéro d'article	121
journal	Sensors (Switzerland)
Volume	20
Numéro de publication	1
Les DOIs	https://doi.org/10.3390/s20010121
état	Publié - 1 janv. 2020
Modification externe	Oui

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10.3390/s20010121

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abstract = "Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.",

keywords = "Magnetic random access memory, Magnetic tunnel junction, Spin transfer torque, Spin-Orbit torque, Voltage-controlled magnetic anisotropy",

author = "Nilson Maciel and Elaine Marques and L{\'i}rida Naviner and Yongliang Zhou and Hao Cai",

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AU - Maciel, Nilson

AU - Marques, Elaine

AU - Naviner, Lírida

AU - Zhou, Yongliang

AU - Cai, Hao

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.

AB - Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.

KW - Magnetic random access memory

KW - Magnetic tunnel junction

KW - Spin transfer torque

KW - Spin-Orbit torque

KW - Voltage-controlled magnetic anisotropy

U2 - 10.3390/s20010121

DO - 10.3390/s20010121

M3 - Review article

C2 - 31878139

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JO - Sensors (Switzerland)

JF - Sensors (Switzerland)

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ER -

Magnetic tunnel junction applications

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