Magneto-electrical transport in V-patterned La_0.7Sr _0.3MnO₃ nanostructures

We investigate the electrical transport and magnetic field dependence of nano-patterned La_0.7Sr_0.3MnO₃ devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.