Résumé
In this paper, we discuss the dynamics of carrier recombination in semiconductor nanoparticles embedded in a glass matrix, forming the so-called semiconductor-doped glasses. We observe that carrier recombination may be made faster by photodarkening and, at high excitation intensity, by Auger processes. We also discuss the mechanisms of the resonant optical Kerr effect in these materials. It is shown to be comprised of a fast component due to free carriers in particles without traps and of a slow one due to trapped carriers in particles with traps. The figure of merit associated with the fast component decreases when the particle size decreases.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 47-56 |
| Nombre de pages | 10 |
| journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 2801 |
| Les DOIs | |
| état | Publié - 10 juin 1996 |
| Evénement | Nonlinear Optics of Low-Dimensional Structures and New Materials 1995 - St. Petersburg, Russie Durée: 27 juin 1995 → 1 juil. 1995 |
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