'MESFET destruction model and experimental validation'

Sophie Telliez; J. P. Brasile; N. Samama

'MESFET destruction model and experimental validation'

Sophie Telliez
, J. P. Brasile
, N. Samama

IUP du Littoral

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.

langue originale	Anglais
Pages	170-173
Nombre de pages	4
état	Publié - 1 janv. 1998
Modification externe	Oui
Evénement	Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97 - Cannes, Fr Durée: 15 sept. 1997 → 19 sept. 1997

Une conférence

Une conférence	Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97
La ville	Cannes, Fr
période	15/09/97 → 19/09/97

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title = "'MESFET destruction model and experimental validation'",

abstract = "This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.",

author = "Sophie Telliez and Brasile, \{J. P.\} and N. Samama",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "170--173",

note = "Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97 ; Conference date: 15-09-1997 Through 19-09-1997",

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AU - Telliez, Sophie

AU - Brasile, J. P.

AU - Samama, N.

PY - 1998/1/1

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N2 - This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.

AB - This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.

UR - https://www.scopus.com/pages/publications/0031636149

M3 - Paper

AN - SCOPUS:0031636149

SP - 170

EP - 173

T2 - Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97

Y2 - 15 September 1997 through 19 September 1997

ER -

'MESFET destruction model and experimental validation'

Résumé

Une conférence

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