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Microscopic characterization of ablation craters produced by femtosecond laser pulses

  • V. V. Temnov
  • , K. Sokolowski-Tinten
  • , N. Stojanovic
  • , S. Kudryashov
  • , D. Von der Linde
  • , B. Kogan
  • , A. Schlarb
  • , B. Weyers
  • , R. Möller
  • , J. Seekamp
  • , C. Sotomayor-Torres
  • University of Duisburg-Essen
  • Bergische Universität Gesamthochschule Wuppertal

Résultats de recherche: Contribution à un journalArticle de conférenceRevue par des pairs

Résumé

The microscopic characterization of ablation craters on gallium arsenide and silico produced by femtosecond laser pulses were discussed. Optical, atomic force and electron microscopy were used for microscopic analysis of craters. It was found that the boundary of the ablation crater for both gallium and silicon consists of a high and narrow rim. Whereas for GaAs the rim is very high and extremely narrow, for Si it was significantly lower and broader. It was also found that the ablation craters on both GaAs and Si were relatively flat.

langue originaleAnglais
Pages (de - à)1032-1039
Nombre de pages8
journalProceedings of SPIE - The International Society for Optical Engineering
Volume4760
Numéro de publicationII
Les DOIs
étatPublié - 1 janv. 2002
Modification externeOui
EvénementHigh-Power Laser Ablation IV - Taos, États-Unis
Durée: 22 avr. 200226 avr. 2002

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