Résumé
The microscopic characterization of ablation craters on gallium arsenide and silico produced by femtosecond laser pulses were discussed. Optical, atomic force and electron microscopy were used for microscopic analysis of craters. It was found that the boundary of the ablation crater for both gallium and silicon consists of a high and narrow rim. Whereas for GaAs the rim is very high and extremely narrow, for Si it was significantly lower and broader. It was also found that the ablation craters on both GaAs and Si were relatively flat.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 1032-1039 |
| Nombre de pages | 8 |
| journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4760 |
| Numéro de publication | II |
| Les DOIs | |
| état | Publié - 1 janv. 2002 |
| Modification externe | Oui |
| Evénement | High-Power Laser Ablation IV - Taos, États-Unis Durée: 22 avr. 2002 → 26 avr. 2002 |
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