TY - GEN
T1 - Microstructural, optical and electrical properties of post-annealed ZnO:Al thin films
AU - Charpentier, Coralie
AU - Prod'Homme, Patricia
AU - Francke, Loïc
AU - Roca I Cabarrocas, Pere
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering from a ceramic mixed target ZnO:Al2O3 (1 wt.%) with a power of 250 W. Two series of samples were deposited at room temperature, the first one in pure Ar atmosphere, the second one in Ar/O2 gas mixture. Effects of post-deposition annealing treatments carried out from 400°C to 500°C under vacuum and in N2/H2 (5%) atmosphere have been investigated. The influence of these parameters was studied by a detailed microstructural analysis using X-Ray diffraction and Raman spectroscopy. For N2/H2 annealing process, the increase of charge carrier concentration limits the increase of the mobility while after vacuum annealing, an improvement of both electrical and optical properties was observed. The increase of the crystallinity and grain size for ZnO:Al films deposited in Ar/O2 gas mixture could explain their improvements. Resistivity was reduced down to 3.5×10-4 Ω.cm, for a mobility of 49 cm2/V.s with a vacuum annealing at 450°C for ZnO:Al deposited in Ar/O2 gas mixture.
AB - Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering from a ceramic mixed target ZnO:Al2O3 (1 wt.%) with a power of 250 W. Two series of samples were deposited at room temperature, the first one in pure Ar atmosphere, the second one in Ar/O2 gas mixture. Effects of post-deposition annealing treatments carried out from 400°C to 500°C under vacuum and in N2/H2 (5%) atmosphere have been investigated. The influence of these parameters was studied by a detailed microstructural analysis using X-Ray diffraction and Raman spectroscopy. For N2/H2 annealing process, the increase of charge carrier concentration limits the increase of the mobility while after vacuum annealing, an improvement of both electrical and optical properties was observed. The increase of the crystallinity and grain size for ZnO:Al films deposited in Ar/O2 gas mixture could explain their improvements. Resistivity was reduced down to 3.5×10-4 Ω.cm, for a mobility of 49 cm2/V.s with a vacuum annealing at 450°C for ZnO:Al deposited in Ar/O2 gas mixture.
UR - https://www.scopus.com/pages/publications/84879232216
U2 - 10.1557/opl.2012.258
DO - 10.1557/opl.2012.258
M3 - Conference contribution
AN - SCOPUS:84879232216
SN - 9781627482141
T3 - Materials Research Society Symposium Proceedings
SP - 42
EP - 47
BT - Oxide Semiconductors-Defects, Growth and Device Fabrication
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 3 December 2011
ER -