Model dielectric function for semiconductors

G. Cappellini; R. Del Sole; Lucia Reining; F. Bechstedt

doi:10.1103/PhysRevB.47.9892

Model dielectric function for semiconductors

G. Cappellini
, R. Del Sole
, Lucia Reining
, F. Bechstedt

University of Rome “Tor Vergata”
Université Paris-Saclay
Friedrich-Schiller University

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.

langue originale	Anglais
Pages (de - à)	9892-9895
Nombre de pages	4
journal	Physical Review B
Volume	47
Numéro de publication	15
Les DOIs	https://doi.org/10.1103/PhysRevB.47.9892
état	Publié - 1 janv. 1993
Modification externe	Oui

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10.1103/PhysRevB.47.9892

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title = "Model dielectric function for semiconductors",

abstract = "We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.",

author = "G. Cappellini and \{Del Sole\}, R. and Lucia Reining and F. Bechstedt",

year = "1993",

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AU - Cappellini, G.

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AU - Reining, Lucia

AU - Bechstedt, F.

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Y1 - 1993/1/1

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AB - We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.

UR - https://www.scopus.com/pages/publications/0001271179

U2 - 10.1103/PhysRevB.47.9892

DO - 10.1103/PhysRevB.47.9892

M3 - Article

AN - SCOPUS:0001271179

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VL - 47

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JO - Physical Review B

JF - Physical Review B

IS - 15

ER -

Model dielectric function for semiconductors

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