TY - GEN
T1 - Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells
AU - Jehl, Zacharie
AU - Suchet, Daniel
AU - Julian, Anatole
AU - Bernard, Cyril
AU - Miyashita, Naoya
AU - Gibelli, Francois
AU - Okada, Yoshitaka
AU - Guillemolles, Jean Francois
N1 - Publisher Copyright:
© 2017 SPIE.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.
AB - Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.
U2 - 10.1117/12.2250473
DO - 10.1117/12.2250473
M3 - Conference contribution
AN - SCOPUS:85019554938
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017
A2 - Freundlich, Alexandre
A2 - Sugiyama, Masakazu
A2 - Lombez, Laurent
PB - SPIE
T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017
Y2 - 30 January 2017 through 1 February 2017
ER -