Modification of semiconductor surfaces irradiated by single intense Fs-laser pulses

V. V. Temnov; K. Sokolowski-Tinten; N. Stojanovic; S. Kudryashov; D. Von der Linde; B. Kogan; A. Schlarb; B. Weyers; R. Möller

Modification of semiconductor surfaces irradiated by single intense Fs-laser pulses

V. V. Temnov
, K. Sokolowski-Tinten
, N. Stojanovic
, S. Kudryashov
, D. Von der Linde
, B. Kogan
, A. Schlarb
, B. Weyers
, R. Möller

University of Duisburg-Essen

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

Ablation morphology produced on GaAs(100) and Si(100) surfaces by single intense fs-laser pulses was investigated using optical interference, differential interference contrast, atomic force and scanning force microscopies. The ablation crater on GaAs manifested itself as a well-defined ring in the optical DIC image. The crated boundary consisted of a rim with a lateral extension of only 50-100 nm and a height of 100-200 nm.

langue originale	Anglais
Pages	223
Nombre de pages	1
état	Publié - 1 janv. 2002
Modification externe	Oui
Evénement	Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, États-Unis Durée: 19 mai 2002 → 24 mai 2002

Une conférence

Une conférence	Conference on Lasers and Electro-Optics (CLEO 2002)
Pays/Territoire	États-Unis
La ville	Long Beach, CA
période	19/05/02 → 24/05/02

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Contient cette citation

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title = "Modification of semiconductor surfaces irradiated by single intense Fs-laser pulses",

abstract = "Ablation morphology produced on GaAs(100) and Si(100) surfaces by single intense fs-laser pulses was investigated using optical interference, differential interference contrast, atomic force and scanning force microscopies. The ablation crater on GaAs manifested itself as a well-defined ring in the optical DIC image. The crated boundary consisted of a rim with a lateral extension of only 50-100 nm and a height of 100-200 nm.",

author = "Temnov, \{V. V.\} and K. Sokolowski-Tinten and N. Stojanovic and S. Kudryashov and \{Von der Linde\}, D. and B. Kogan and A. Schlarb and B. Weyers and R. M{\"o}ller",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "223",

note = "Conference on Lasers and Electro-Optics (CLEO 2002) ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - CONF

T1 - Modification of semiconductor surfaces irradiated by single intense Fs-laser pulses

AU - Temnov, V. V.

AU - Sokolowski-Tinten, K.

AU - Stojanovic, N.

AU - Kudryashov, S.

AU - Von der Linde, D.

AU - Kogan, B.

AU - Schlarb, A.

AU - Weyers, B.

AU - Möller, R.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Ablation morphology produced on GaAs(100) and Si(100) surfaces by single intense fs-laser pulses was investigated using optical interference, differential interference contrast, atomic force and scanning force microscopies. The ablation crater on GaAs manifested itself as a well-defined ring in the optical DIC image. The crated boundary consisted of a rim with a lateral extension of only 50-100 nm and a height of 100-200 nm.

AB - Ablation morphology produced on GaAs(100) and Si(100) surfaces by single intense fs-laser pulses was investigated using optical interference, differential interference contrast, atomic force and scanning force microscopies. The ablation crater on GaAs manifested itself as a well-defined ring in the optical DIC image. The crated boundary consisted of a rim with a lateral extension of only 50-100 nm and a height of 100-200 nm.

UR - https://www.scopus.com/pages/publications/0036455213

M3 - Paper

AN - SCOPUS:0036455213

SP - 223

T2 - Conference on Lasers and Electro-Optics (CLEO 2002)

Y2 - 19 May 2002 through 24 May 2002

ER -

Modification of semiconductor surfaces irradiated by single intense Fs-laser pulses

Résumé

Une conférence

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