Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

M. Gensch; K. Roodenko; K. Hinrichs; R. Hunger; A. G. Güell; A. Merson; U. Schade; Y. Shapira; Th Dittrich; J. Rappich; N. Esser

doi:10.1116/1.1947801

Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

M. Gensch
, K. Roodenko
, K. Hinrichs
, R. Hunger
, A. G. Güell
, A. Merson
, U. Schade
, Y. Shapira
, Th Dittrich
, J. Rappich
, N. Esser

ISAS Institute for Analytical Sciences
Technische Universität Darmstadt
University of Barcelona
Tel Aviv University
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

langue originale	Anglais
Pages (de - à)	1838-1842
Nombre de pages	5
journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Numéro de publication	4
Les DOIs	https://doi.org/10.1116/1.1947801
état	Publié - 1 déc. 2005
Modification externe	Oui

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10.1116/1.1947801

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Gensch, M., Roodenko, K., Hinrichs, K., Hunger, R., Güell, A. G., Merson, A., Schade, U., Shapira, Y., Dittrich, T., Rappich, J., & Esser, N. (2005). Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(4), 1838-1842. https://doi.org/10.1116/1.1947801

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title = "Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films",

abstract = "This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.",

author = "M. Gensch and K. Roodenko and K. Hinrichs and R. Hunger and G{\"u}ell, \{A. G.\} and A. Merson and U. Schade and Y. Shapira and Th Dittrich and J. Rappich and N. Esser",

year = "2005",

month = dec,

day = "1",

doi = "10.1116/1.1947801",

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Gensch, M, Roodenko, K, Hinrichs, K, Hunger, R, Güell, AG, Merson, A, Schade, U, Shapira, Y, Dittrich, T, Rappich, J & Esser, N 2005, 'Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, VOL. 23, Numéro 4, p. 1838-1842. https://doi.org/10.1116/1.1947801

TY - JOUR

T1 - Molecule-solid interfaces studied with infrared ellipsometry

T2 - Ultrathin nitrobenzene films

AU - Gensch, M.

AU - Roodenko, K.

AU - Hinrichs, K.

AU - Hunger, R.

AU - Güell, A. G.

AU - Merson, A.

AU - Schade, U.

AU - Shapira, Y.

AU - Dittrich, Th

AU - Rappich, J.

AU - Esser, N.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

AB - This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

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DO - 10.1116/1.1947801

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SN - 1071-1023

VL - 23

SP - 1838

EP - 1842

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

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