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Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture

  • Optical Technology Division
  • National Institute of Standards and Technology
  • Spectrum Scientific, Inc.

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5 Citations (Scopus)

Résumé

We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). The unperturbed, reference grating profile was determined from multiple azimuthal configurations using a generalized ellipsometer, focusing the incident beam into a 60 μm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture, introducing significant depolarization effects, and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the artificially perturbed grating were then fit using the same model, and the resulting root-mean-square error (RMSE) values for both targets were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER.

langue originaleAnglais
titreMetrology, Inspection, and Process Control for Microlithography XXV
Les DOIs
étatPublié - 23 mai 2011
EvénementMetrology, Inspection, and Process Control for Microlithography XXV - San Jose, CA, États-Unis
Durée: 28 févr. 20113 mars 2011

Série de publications

NomProceedings of SPIE - The International Society for Optical Engineering
Volume7971
ISSN (imprimé)0277-786X

Une conférence

Une conférenceMetrology, Inspection, and Process Control for Microlithography XXV
Pays/TerritoireÉtats-Unis
La villeSan Jose, CA
période28/02/113/03/11

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