Multiple photo-assisted CVD of thin film materials for III-V device technology

Y. I. Nissim; J. M. Moison; F. Houzay; F. Lebland; C. Licoppe; M. Bensoussan

Multiple photo-assisted CVD of thin film materials for III-V device technology

Y. I. Nissim
, J. M. Moison
, F. Houzay
, F. Lebland
, C. Licoppe
, M. Bensoussan

Cent Natl d'Etudes des

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using 'flash' CVD or UVCVD. The aim of this work is to propose alternative technologies for III-V semiconductors.

langue originale	Anglais
Pages (de - à)	216-228
Nombre de pages	13
journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1393
état	Publié - 1 janv. 1991
Modification externe	Oui
Evénement	Rapid Thermal and Related Processing Techniques - Santa Clara, CA, USA Durée: 2 oct. 1990 → 3 oct. 1990

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title = "Multiple photo-assisted CVD of thin film materials for III-V device technology",

abstract = "New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using 'flash' CVD or UVCVD. The aim of this work is to propose alternative technologies for III-V semiconductors.",

author = "Nissim, \{Y. I.\} and Moison, \{J. M.\} and F. Houzay and F. Lebland and C. Licoppe and M. Bensoussan",

year = "1991",

month = jan,

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language = "English",

volume = "1393",

pages = "216--228",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Rapid Thermal and Related Processing Techniques ; Conference date: 02-10-1990 Through 03-10-1990",

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TY - JOUR

T1 - Multiple photo-assisted CVD of thin film materials for III-V device technology

AU - Nissim, Y. I.

AU - Moison, J. M.

AU - Houzay, F.

AU - Lebland, F.

AU - Licoppe, C.

AU - Bensoussan, M.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using 'flash' CVD or UVCVD. The aim of this work is to propose alternative technologies for III-V semiconductors.

AB - New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using 'flash' CVD or UVCVD. The aim of this work is to propose alternative technologies for III-V semiconductors.

M3 - Conference article

AN - SCOPUS:0025839261

SN - 0277-786X

VL - 1393

SP - 216

EP - 228

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Rapid Thermal and Related Processing Techniques

Y2 - 2 October 1990 through 3 October 1990

ER -

Multiple photo-assisted CVD of thin film materials for III-V device technology

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