Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

M. Bouttemy; D. Aureau; M. Frégnaux; Y. Shoji; Z. Jehl; D. Suchet; J. F. Guillemoles; A. Etcheberry; Y. Okada

doi:10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

M. Bouttemy
, D. Aureau
, M. Frégnaux
, Y. Shoji
, Z. Jehl
, D. Suchet
, J. F. Guillemoles
, A. Etcheberry
, Y. Okada

Université Versailles-Saint Quentin
Tokyo University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

langue originale	Anglais
titre	Processes at the Semiconductor Solution Interface 8
rédacteurs en chef	C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, V. Chakrapani
Editeur	Electrochemical Society Inc.
Pages	37-46
Nombre de pages	10
Edition	4
ISBN (Electronique)	9781607688662, 9781607688686, 9781607688693, 9781607688693, 9781607688709, 9781607688716, 9781607688723
Les DOIs	https://doi.org/10.1149/08904.0037ecst
état	Publié - 1 janv. 2019
Evénement	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting - Dallas, États-Unis Durée: 26 mai 2019 → 30 mai 2019

Série de publications

Nom	ECS Transactions
nombre	4
Volume	89
ISSN (imprimé)	1938-6737
ISSN (Electronique)	1938-5862

Une conférence

Une conférence	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting
Pays/Territoire	États-Unis
La ville	Dallas
période	26/05/19 → 30/05/19

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1149/08904.0037ecst

Contient cette citation

Bouttemy, M., Aureau, D., Frégnaux, M., Shoji, Y., Jehl, Z., Suchet, D., Guillemoles, J. F., Etcheberry, A., & Okada, Y. (2019). Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. Dans C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, & V. Chakrapani (eds.), Processes at the Semiconductor Solution Interface 8 (4 Ed., p. 37-46). (ECS Transactions; Vol 89, Numéro 4). Electrochemical Society Inc.. https://doi.org/10.1149/08904.0037ecst

Bouttemy, M. ; Aureau, D. ; Frégnaux, M. et al. / Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. Processes at the Semiconductor Solution Interface 8. Editeur / C. O'Dwyer ; D. N. Buckley ; A. Etcheberry ; A. C. Hillier ; R. Lynch ; P. M. Vereecken ; H. Wang ; V. Chakrapani. 4. Ed. Electrochemical Society Inc., 2019. p. 37-46 (ECS Transactions; 4).

@inproceedings{dd81db276e634fb0a153d9221b867058,

title = "Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications",

abstract = "Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48\%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.",

author = "M. Bouttemy and D. Aureau and M. Fr{\'e}gnaux and Y. Shoji and Z. Jehl and D. Suchet and Guillemoles, \{J. F.\} and A. Etcheberry and Y. Okada",

note = "Publisher Copyright: {\textcopyright} 2019 Electrochemical Society Inc.. All rights reserved.; Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting ; Conference date: 26-05-2019 Through 30-05-2019",

year = "2019",

month = jan,

day = "1",

doi = "10.1149/08904.0037ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "37--46",

editor = "C. O'Dwyer and Buckley, \{D. N.\} and A. Etcheberry and Hillier, \{A. C.\} and R. Lynch and Vereecken, \{P. M.\} and H. Wang and V. Chakrapani",

booktitle = "Processes at the Semiconductor Solution Interface 8",

edition = "4",

}

Bouttemy, M, Aureau, D, Frégnaux, M, Shoji, Y, Jehl, Z, Suchet, D , Guillemoles, JF, Etcheberry, A & Okada, Y 2019, Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. Dans C O'Dwyer, DN Buckley, A Etcheberry, AC Hillier, R Lynch, PM Vereecken, H Wang & V Chakrapani (eds), Processes at the Semiconductor Solution Interface 8. 4 edn, ECS Transactions, Numéro 4, VOL. 89, Electrochemical Society Inc., p. 37-46, Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting, Dallas, États-Unis, 26/05/19. https://doi.org/10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. / Bouttemy, M.; Aureau, D.; Frégnaux, M. et al.
Processes at the Semiconductor Solution Interface 8. Ed. / C. O'Dwyer; D. N. Buckley; A. Etcheberry; A. C. Hillier; R. Lynch; P. M. Vereecken; H. Wang; V. Chakrapani. 4. Ed. Electrochemical Society Inc., 2019. p. 37-46 (ECS Transactions; Vol 89, Numéro 4).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

AU - Bouttemy, M.

AU - Aureau, D.

AU - Frégnaux, M.

AU - Shoji, Y.

AU - Jehl, Z.

AU - Suchet, D.

AU - Guillemoles, J. F.

AU - Etcheberry, A.

AU - Okada, Y.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

AB - Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

U2 - 10.1149/08904.0037ecst

DO - 10.1149/08904.0037ecst

M3 - Conference contribution

AN - SCOPUS:85070089866

T3 - ECS Transactions

SP - 37

EP - 46

BT - Processes at the Semiconductor Solution Interface 8

A2 - O'Dwyer, C.

A2 - Buckley, D. N.

A2 - Etcheberry, A.

A2 - Hillier, A. C.

A2 - Lynch, R.

A2 - Vereecken, P. M.

A2 - Wang, H.

A2 - Chakrapani, V.

PB - Electrochemical Society Inc.

T2 - Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting

Y2 - 26 May 2019 through 30 May 2019

ER -

Bouttemy M, Aureau D, Frégnaux M, Shoji Y, Jehl Z, Suchet D et al. Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. Dans O'Dwyer C, Buckley DN, Etcheberry A, Hillier AC, Lynch R, Vereecken PM, Wang H, Chakrapani V, rédacteurs en chef, Processes at the Semiconductor Solution Interface 8. 4 Ed. Electrochemical Society Inc. 2019. p. 37-46. (ECS Transactions; 4). doi: 10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

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