Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation

K. Saarinen; S. Kuisma; P. Hautojarvi; C. Corbel; C. LeBerre

Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation

K. Saarinen
, S. Kuisma
, P. Hautojarvi
, C. Corbel
, C. LeBerre

Aalto University

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We have performed positron lifetime experiments under monochromatic illumination in undoped semi-insulating GaAs. A negative vacancy, identified as the Ga vacancy, is observed in darkness. Illumination with 1.42 eV photons below 150 K reveals another type of vacancy, identified as the As vacancy. The As vacancy has a negative charge state above the ionization level at 50±5 meV below the conduction band. This level offers a microscopic explanation to the optical near-band-edge absorption. The concentrations of both Ga and As vacancies are 10¹⁵-10¹⁶cm^-3.

langue originale	Anglais
Pages (de - à)	341-346
Nombre de pages	6
journal	Materials Science Forum
Volume	143-4
Numéro de publication	pt 1
état	Publié - 1 déc. 1994
Modification externe	Oui
Evénement	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Durée: 18 juil. 1993 → 23 juil. 1993

Contient cette citation

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title = "Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation",

abstract = "We have performed positron lifetime experiments under monochromatic illumination in undoped semi-insulating GaAs. A negative vacancy, identified as the Ga vacancy, is observed in darkness. Illumination with 1.42 eV photons below 150 K reveals another type of vacancy, identified as the As vacancy. The As vacancy has a negative charge state above the ionization level at 50±5 meV below the conduction band. This level offers a microscopic explanation to the optical near-band-edge absorption. The concentrations of both Ga and As vacancies are 1015-1016cm-3.",

author = "K. Saarinen and S. Kuisma and P. Hautojarvi and C. Corbel and C. LeBerre",

year = "1994",

month = dec,

day = "1",

language = "English",

volume = "143-4",

pages = "341--346",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

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note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

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TY - JOUR

T1 - Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation

AU - Saarinen, K.

AU - Kuisma, S.

AU - Hautojarvi, P.

AU - Corbel, C.

AU - LeBerre, C.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have performed positron lifetime experiments under monochromatic illumination in undoped semi-insulating GaAs. A negative vacancy, identified as the Ga vacancy, is observed in darkness. Illumination with 1.42 eV photons below 150 K reveals another type of vacancy, identified as the As vacancy. The As vacancy has a negative charge state above the ionization level at 50±5 meV below the conduction band. This level offers a microscopic explanation to the optical near-band-edge absorption. The concentrations of both Ga and As vacancies are 1015-1016cm-3.

AB - We have performed positron lifetime experiments under monochromatic illumination in undoped semi-insulating GaAs. A negative vacancy, identified as the Ga vacancy, is observed in darkness. Illumination with 1.42 eV photons below 150 K reveals another type of vacancy, identified as the As vacancy. The As vacancy has a negative charge state above the ionization level at 50±5 meV below the conduction band. This level offers a microscopic explanation to the optical near-band-edge absorption. The concentrations of both Ga and As vacancies are 1015-1016cm-3.

M3 - Conference article

AN - SCOPUS:17444446575

SN - 0255-5476

VL - 143-4

SP - 341

EP - 346

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 1

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation

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