Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies

C. Le Berre; C. Corbel; R. Mih; M. R. Brozel; S. Tüzemen; S. Kuisma; K. Saarinen; P. Hautojärvi; R. Fornari

doi:10.1063/1.113158

Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies

C. Le Berre
, C. Corbel
, R. Mih
, M. R. Brozel
, S. Tüzemen
, S. Kuisma
, K. Saarinen
, P. Hautojärvi
, R. Fornari

Institut Pierre Simon Laplace, CNRS and CEA
Department of Electrical Engineering and Electronics
University of Manchester
Laboratory of Physics
Aalto University
CNR
Ev-K2-CNR Committee

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

14 Citations (Scopus)

Résumé

We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.

langue originale	Anglais
Pages (de - à)	2534
Nombre de pages	1
journal	Applied Physics Letters
Volume	66
Numéro de publication	19
Les DOIs	https://doi.org/10.1063/1.113158
état	Publié - 1 janv. 1995
Modification externe	Oui

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10.1063/1.113158

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abstract = "We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.",

author = "\{Le Berre\}, C. and C. Corbel and R. Mih and Brozel, \{M. R.\} and S. T{\"u}zemen and S. Kuisma and K. Saarinen and P. Hautoj{\"a}rvi and R. Fornari",

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T2 - Role of As vacancies

AU - Le Berre, C.

AU - Corbel, C.

AU - Mih, R.

AU - Brozel, M. R.

AU - Tüzemen, S.

AU - Kuisma, S.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Fornari, R.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.

AB - We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.

U2 - 10.1063/1.113158

DO - 10.1063/1.113158

M3 - Article

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SN - 0003-6951

VL - 66

SP - 2534

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies

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