Near-surface electrical effects of oxidation and hydrogenation in silicon

I. Delidais; D. Ballutaud; A. Boutry-Forveille; J. L. Maurice; M. Aucouturier; B. Leroy

doi:10.1016/0921-5107(89)90257-2

Near-surface electrical effects of oxidation and hydrogenation in silicon

I. Delidais
, D. Ballutaud
, A. Boutry-Forveille
, J. L. Maurice
, M. Aucouturier
, B. Leroy

CNRS
IBM GBS France

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

langue originale	Anglais
Pages (de - à)	277-280
Nombre de pages	4
journal	Materials Science and Engineering: B
Volume	4
Numéro de publication	1-4
Les DOIs	https://doi.org/10.1016/0921-5107(89)90257-2
état	Publié - 1 janv. 1989

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10.1016/0921-5107(89)90257-2

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title = "Near-surface electrical effects of oxidation and hydrogenation in silicon",

abstract = "The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.",

author = "I. Delidais and D. Ballutaud and A. Boutry-Forveille and Maurice, \{J. L.\} and M. Aucouturier and B. Leroy",

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T1 - Near-surface electrical effects of oxidation and hydrogenation in silicon

AU - Delidais, I.

AU - Ballutaud, D.

AU - Boutry-Forveille, A.

AU - Maurice, J. L.

AU - Aucouturier, M.

AU - Leroy, B.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

AB - The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

UR - https://www.scopus.com/pages/publications/0024750682

U2 - 10.1016/0921-5107(89)90257-2

DO - 10.1016/0921-5107(89)90257-2

M3 - Article

AN - SCOPUS:0024750682

SN - 0921-5107

VL - 4

SP - 277

EP - 280

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-4

ER -

Near-surface electrical effects of oxidation and hydrogenation in silicon

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