New method for determining the series resistances in a MESFET or TEGFET

P. Urien; D. Delagebeaudeuf

doi:10.1049/el:19830478

New method for determining the series resistances in a MESFET or TEGFET

P. Urien
, D. Delagebeaudeuf

Thales Group

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

langue originale	Anglais
Pages (de - à)	702-703
Nombre de pages	2
journal	Electronics Letters
Volume	19
Numéro de publication	17
Les DOIs	https://doi.org/10.1049/el:19830478
état	Publié - 18 août 1983
Modification externe	Oui

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10.1049/el:19830478

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@article{5ca25ee30d6348abac21bf4eeb14fcb3,

title = "New method for determining the series resistances in a MESFET or TEGFET",

abstract = "The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.",

keywords = "Fieldeffect transistors, Semiconductor devices and materials",

author = "P. Urien and D. Delagebeaudeuf",

year = "1983",

month = aug,

day = "18",

doi = "10.1049/el:19830478",

language = "English",

volume = "19",

pages = "702--703",

journal = "Electronics Letters",

issn = "0013-5194",

number = "17",

}

TY - JOUR

T1 - New method for determining the series resistances in a MESFET or TEGFET

AU - Urien, P.

AU - Delagebeaudeuf, D.

PY - 1983/8/18

Y1 - 1983/8/18

N2 - The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

AB - The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

KW - Fieldeffect transistors

KW - Semiconductor devices and materials

UR - https://www.scopus.com/pages/publications/0020808231

U2 - 10.1049/el:19830478

DO - 10.1049/el:19830478

M3 - Article

AN - SCOPUS:0020808231

SN - 0013-5194

VL - 19

SP - 702

EP - 703

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

New method for determining the series resistances in a MESFET or TEGFET

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