New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

A. S. Gudovskikh; R. Chouffot; J. P. Kleider; N. A. Kaluzhniy; V. M. Lantratov; S. A. Mintairov; J. Damon-Lacoste; D. Eon; P. Roca i Cabarrocas; P. J. Ribeyron

doi:10.1016/j.tsf.2007.12.021

New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

A. S. Gudovskikh
, R. Chouffot
, J. P. Kleider
, N. A. Kaluzhniy
, V. M. Lantratov
, S. A. Mintairov
, J. Damon-Lacoste
, D. Eon
, P. Roca i Cabarrocas
, P. J. Ribeyron

Institute of Bioorganic Chemistry
CNRS
Ioffe Institute
Institut polytechnique de Paris
Univ. Joseph Fourier-Grenoble 1

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

11 Citations (Scopus)

Résumé

The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.

langue originale	Anglais
Pages (de - à)	6786-6790
Nombre de pages	5
journal	Thin Solid Films
Volume	516
Numéro de publication	20
Les DOIs	https://doi.org/10.1016/j.tsf.2007.12.021
état	Publié - 30 août 2008

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10.1016/j.tsf.2007.12.021

Contient cette citation

Gudovskikh, A. S., Chouffot, R., Kleider, J. P., Kaluzhniy, N. A., Lantratov, V. M., Mintairov, S. A., Damon-Lacoste, J., Eon, D., Roca i Cabarrocas, P., & Ribeyron, P. J. (2008). New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements. Thin Solid Films, 516(20), 6786-6790. https://doi.org/10.1016/j.tsf.2007.12.021

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title = "New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements",

abstract = "The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.",

keywords = "Capacitance, Heterojunctions, Interface, Solar cell",

author = "Gudovskikh, \{A. S.\} and R. Chouffot and Kleider, \{J. P.\} and Kaluzhniy, \{N. A.\} and Lantratov, \{V. M.\} and Mintairov, \{S. A.\} and J. Damon-Lacoste and D. Eon and \{Roca i Cabarrocas\}, P. and Ribeyron, \{P. J.\}",

year = "2008",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2007.12.021",

language = "English",

volume = "516",

pages = "6786--6790",

journal = "Thin Solid Films",

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number = "20",

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TY - JOUR

T1 - New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

AU - Gudovskikh, A. S.

AU - Chouffot, R.

AU - Kleider, J. P.

AU - Kaluzhniy, N. A.

AU - Lantratov, V. M.

AU - Mintairov, S. A.

AU - Damon-Lacoste, J.

AU - Eon, D.

AU - Roca i Cabarrocas, P.

AU - Ribeyron, P. J.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.

AB - The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.

KW - Capacitance

KW - Heterojunctions

KW - Interface

KW - Solar cell

U2 - 10.1016/j.tsf.2007.12.021

DO - 10.1016/j.tsf.2007.12.021

M3 - Article

AN - SCOPUS:45949095696

SN - 0040-6090

VL - 516

SP - 6786

EP - 6790

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

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