Passer à la navigation principale Passer à la recherche Passer au contenu principal

New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching

  • R. Haïdar
  • , Ph Kupecek
  • , E. Rosencher
  • , R. Triboulet
  • , Ph Lemasson

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The French aerospace agency is involved in the realization of compact solid-state coherent sources, such as optical parametric oscillators (OPO), using new materials, such as highly non-linearly efficient semiconductors (ZnSe, GaAs or InP). However, since these materials are optically Isotropic, they require new phase-matching techniques. We report the quasi-phase matched difference frequency generation in isotropic semiconductors using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler wave outputs of an OPO. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.

langue originaleAnglais
Pages (de - à)155-160
Nombre de pages6
journalOpto-Electronics Review
Volume11
Numéro de publication2
étatPublié - 1 janv. 2003
Modification externeOui

Empreinte digitale

Examiner les sujets de recherche de « New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching ». Ensemble, ils forment une empreinte digitale unique.

Contient cette citation