Nitrures de faible gap epitaxies sur substrat GaAs pour application optoélectronique

Low bandgap nitrides such as GaInAsN grown on GaAs substrate have received a large amount of interest for several years as an alternative material system to the well matured GaInAsP/InP semiconductor system especially for 1.3 μm emission. However, to reach high quality GaInAsN material suitable for laser applications, it is required to overcome several specific growth issues, which are reviewed in this paper for MOVPE technique as compared to MBE. We have particularly established that the incorporation of nitrogen in Ga(In)As grown by MOVPE requires specific growth conditions, which can result in strong improvement of both photoluminescence and lasing characteristics. Our performances of GaAs-based long wavelength lasers as well as those from the recent literature are compared to the state of art of InP-based lasers.