No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells

The use of phosphorous-doped microcrystalline silicon as the n-type electrode in single junction hydrogenated amorphous silicon solar cells was analyzed. The output characteristics of the solar cells indicated a sharp localization of the field at the N/I interface of the cell. The results showed that the use of microcrystalline N layers in single junction solar cells could not enhance the open-circuit voltage and overall cell efficiency.