Non perturbative exciton-phonon coupling for a single GaAs quantum dot

E. Peter; J. Hours; P. Senellart; A. Vasanelli; A. Cavanna; J. Bloch

doi:10.1002/pssc.200304021

Non perturbative exciton-phonon coupling for a single GaAs quantum dot

E. Peter
, J. Hours
, P. Senellart
, A. Vasanelli
, A. Cavanna
, J. Bloch

École Polytechnique

CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report on temperature dependent photoluminescence measurements on single monolayer fluctuation GaAs/AlGaAs quantum dots. At low temperature, the exciton lineshape deviates from the expected Lorentzian profile, with the appearance of asymmetric acoustic phonon sidebands. The temperature dependence of the exciton lineshape and its asymmetry, are very well accounted by a model describing the non-perturbative coupling with acoustic phonons. The effect of confinement on these phonon sidebands is finally adressed.

langue originale	Anglais
Pages (de - à)	438-441
Nombre de pages	4
journal	Physica Status Solidi C: Conferences
Volume	1
Numéro de publication	3
Les DOIs	https://doi.org/10.1002/pssc.200304021
état	Publié - 17 mai 2004

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10.1002/pssc.200304021

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abstract = "We report on temperature dependent photoluminescence measurements on single monolayer fluctuation GaAs/AlGaAs quantum dots. At low temperature, the exciton lineshape deviates from the expected Lorentzian profile, with the appearance of asymmetric acoustic phonon sidebands. The temperature dependence of the exciton lineshape and its asymmetry, are very well accounted by a model describing the non-perturbative coupling with acoustic phonons. The effect of confinement on these phonon sidebands is finally adressed.",

author = "E. Peter and J. Hours and P. Senellart and A. Vasanelli and A. Cavanna and J. Bloch",

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T1 - Non perturbative exciton-phonon coupling for a single GaAs quantum dot

AU - Peter, E.

AU - Hours, J.

AU - Senellart, P.

AU - Vasanelli, A.

AU - Cavanna, A.

AU - Bloch, J.

PY - 2004/5/17

Y1 - 2004/5/17

N2 - We report on temperature dependent photoluminescence measurements on single monolayer fluctuation GaAs/AlGaAs quantum dots. At low temperature, the exciton lineshape deviates from the expected Lorentzian profile, with the appearance of asymmetric acoustic phonon sidebands. The temperature dependence of the exciton lineshape and its asymmetry, are very well accounted by a model describing the non-perturbative coupling with acoustic phonons. The effect of confinement on these phonon sidebands is finally adressed.

AB - We report on temperature dependent photoluminescence measurements on single monolayer fluctuation GaAs/AlGaAs quantum dots. At low temperature, the exciton lineshape deviates from the expected Lorentzian profile, with the appearance of asymmetric acoustic phonon sidebands. The temperature dependence of the exciton lineshape and its asymmetry, are very well accounted by a model describing the non-perturbative coupling with acoustic phonons. The effect of confinement on these phonon sidebands is finally adressed.

U2 - 10.1002/pssc.200304021

DO - 10.1002/pssc.200304021

M3 - Article

AN - SCOPUS:2342448551

SN - 1610-1634

VL - 1

SP - 438

EP - 441

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

ER -

Non perturbative exciton-phonon coupling for a single GaAs quantum dot

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