Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

S. A. Solin; D. R. Hines; A. C.H. Rowe; J. S. Tsai; Yu A. Pashkin; S. J. Chung; N. Goel; M. B. Santos

doi:10.1063/1.1481238

Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

S. A. Solin
, D. R. Hines
, A. C.H. Rowe
, J. S. Tsai
, Yu A. Pashkin
, S. J. Chung
, N. Goel
, M. B. Santos

NEC Research Institute
NEC Fundamental Res. Laboratories
University of Oklahoma

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.² with a 300 K EMR of 6% and a current sensitivity of 147 /T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.², it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.².

langue originale	Anglais
Pages (de - à)	4012-4014
Nombre de pages	3
journal	Applied Physics Letters
Volume	80
Numéro de publication	21
Les DOIs	https://doi.org/10.1063/1.1481238
état	Publié - 27 mai 2002
Modification externe	Oui

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10.1063/1.1481238

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title = "Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording",

abstract = "A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6\% and a current sensitivity of 147 /T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.",

author = "Solin, \{S. A.\} and Hines, \{D. R.\} and Rowe, \{A. C.H.\} and Tsai, \{J. S.\} and Pashkin, \{Yu A.\} and Chung, \{S. J.\} and N. Goel and Santos, \{M. B.\}",

year = "2002",

month = may,

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AU - Solin, S. A.

AU - Hines, D. R.

AU - Rowe, A. C.H.

AU - Tsai, J. S.

AU - Pashkin, Yu A.

AU - Chung, S. J.

AU - Goel, N.

AU - Santos, M. B.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 /T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.

AB - A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 /T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.

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DO - 10.1063/1.1481238

M3 - Article

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SN - 0003-6951

VL - 80

SP - 4012

EP - 4014

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

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