Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

Paul Narchi; Romain Cariou; Martin Foldyna; Patricia Prod'Homme; Pere Roca I. Cabarrocas

doi:10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

Paul Narchi
, Romain Cariou
, Martin Foldyna
, Patricia Prod'Homme
, Pere Roca I. Cabarrocas

Total
Université Paris-Saclay
Institut Photovoltaïque d'Ile-de-France

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

langue originale	Anglais
titre	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1-6
Nombre de pages	6
ISBN (Electronique)	9781509056057
Les DOIs	https://doi.org/10.1109/PVSC.2017.8366875
état	Publié - 1 janv. 2017
Evénement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, États-Unis Durée: 25 juin 2017 → 30 juin 2017

Série de publications

Nom	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Une conférence

Une conférence	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Pays/Territoire	États-Unis
La ville	Washington
période	25/06/17 → 30/06/17

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2017.8366875

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Narchi, P., Cariou, R., Foldyna, M., Prod'Homme, P., & Cabarrocas, P. R. I. (2017). Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (p. 1-6). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366875

Narchi, Paul ; Cariou, Romain ; Foldyna, Martin et al. / Notice of Removal : Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{631f5c1a41854023827b21e1ce14aa90,

title = "Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy",

abstract = "Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.",

keywords = "Carrier Lifetime, Epitaxial Silicon, Kelvin Probe Force Microscopy, Modulated Frequency, Silicon, Thin Film Solar Cells",

author = "Paul Narchi and Romain Cariou and Martin Foldyna and Patricia Prod'Homme and Cabarrocas, \{Pere Roca I.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/PVSC.2017.8366875",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--6",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

Narchi, P, Cariou, R, Foldyna, M, Prod'Homme, P & Cabarrocas, PRI 2017, Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., p. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, États-Unis, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. / Narchi, Paul; Cariou, Romain; Foldyna, Martin et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Notice of Removal

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Narchi, Paul

AU - Cariou, Romain

AU - Foldyna, Martin

AU - Prod'Homme, Patricia

AU - Cabarrocas, Pere Roca I.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

AB - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

KW - Carrier Lifetime

KW - Epitaxial Silicon

KW - Kelvin Probe Force Microscopy

KW - Modulated Frequency

KW - Silicon

KW - Thin Film Solar Cells

UR - https://www.scopus.com/pages/publications/85048510722

U2 - 10.1109/PVSC.2017.8366875

DO - 10.1109/PVSC.2017.8366875

M3 - Conference contribution

AN - SCOPUS:85048510722

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1

EP - 6

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Narchi P, Cariou R, Foldyna M, Prod'Homme P, Cabarrocas PRI. Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-6. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

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Une conférence

SDG des Nations Unies

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