Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure

T. Novikova; B. Kalache; P. Bulkin; K. Hassouni; W. Morscheidt; P. Roca i Cabarrocas

doi:10.1063/1.1555678

Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure

T. Novikova
, B. Kalache
, P. Bulkin
, K. Hassouni
, W. Morscheidt
, P. Roca i Cabarrocas

Institut polytechnique de Paris
Université Paris 13

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A numerical model of hydrogen plasmas involved in amorphous and microcrystalline silicon deposition was presented. A symmetric radio frequency plasma with one electrode driven and one grounded (no self-bias) was studied. A one-dimensional time-dependent fluid model was used for the description of neutrals, positive and negative ions and electrons. Results indicated strong influence of pressure and frequency on hydrogen discharges characteristics.

langue originale	Anglais
Pages (de - à)	3198-3206
Nombre de pages	9
journal	Journal of Applied Physics
Volume	93
Numéro de publication	6
Les DOIs	https://doi.org/10.1063/1.1555678
état	Publié - 15 mars 2003

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10.1063/1.1555678

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@article{88190444767a49599ab605e000ef0745,

title = "Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure",

abstract = "A numerical model of hydrogen plasmas involved in amorphous and microcrystalline silicon deposition was presented. A symmetric radio frequency plasma with one electrode driven and one grounded (no self-bias) was studied. A one-dimensional time-dependent fluid model was used for the description of neutrals, positive and negative ions and electrons. Results indicated strong influence of pressure and frequency on hydrogen discharges characteristics.",

author = "T. Novikova and B. Kalache and P. Bulkin and K. Hassouni and W. Morscheidt and \{Roca i Cabarrocas\}, P.",

year = "2003",

month = mar,

day = "15",

doi = "10.1063/1.1555678",

language = "English",

volume = "93",

pages = "3198--3206",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Numerical modeling of capacitively coupled hydrogen plasmas

T2 - Effects of frequency and pressure

AU - Novikova, T.

AU - Kalache, B.

AU - Bulkin, P.

AU - Hassouni, K.

AU - Morscheidt, W.

AU - Roca i Cabarrocas, P.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - A numerical model of hydrogen plasmas involved in amorphous and microcrystalline silicon deposition was presented. A symmetric radio frequency plasma with one electrode driven and one grounded (no self-bias) was studied. A one-dimensional time-dependent fluid model was used for the description of neutrals, positive and negative ions and electrons. Results indicated strong influence of pressure and frequency on hydrogen discharges characteristics.

AB - A numerical model of hydrogen plasmas involved in amorphous and microcrystalline silicon deposition was presented. A symmetric radio frequency plasma with one electrode driven and one grounded (no self-bias) was studied. A one-dimensional time-dependent fluid model was used for the description of neutrals, positive and negative ions and electrons. Results indicated strong influence of pressure and frequency on hydrogen discharges characteristics.

U2 - 10.1063/1.1555678

DO - 10.1063/1.1555678

M3 - Article

AN - SCOPUS:0037445037

SN - 0021-8979

VL - 93

SP - 3198

EP - 3206

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure

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