Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation

R. Krause; K. Saarinen; P. Hautojärvi; A. Polity; G. Gärtner; C. Corbel

doi:10.1103/PhysRevLett.65.3329

Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation

R. Krause
, K. Saarinen
, P. Hautojärvi
, A. Polity
, G. Gärtner
, C. Corbel

Laboratory of Physics
Aalto University
Department of Physics
Martin Luther University Halle-Wittenberg
TU Bergakademie Freiberg
Institut National des Sciences et Techniques Nucléaires

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

71 Citations (Scopus)

Résumé

A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indiacte that the monovacancy or its immediate surroundings is negatively charged.

langue originale	Anglais
Pages (de - à)	3329-3332
Nombre de pages	4
journal	Physical Review Letters
Volume	65
Numéro de publication	26
Les DOIs	https://doi.org/10.1103/PhysRevLett.65.3329
état	Publié - 1 janv. 1990
Modification externe	Oui

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10.1103/PhysRevLett.65.3329

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title = "Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation",

abstract = "A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indiacte that the monovacancy or its immediate surroundings is negatively charged.",

author = "R. Krause and K. Saarinen and P. Hautoj{\"a}rvi and A. Polity and G. G{\"a}rtner and C. Corbel",

year = "1990",

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doi = "10.1103/PhysRevLett.65.3329",

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T1 - Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation

AU - Krause, R.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Polity, A.

AU - Gärtner, G.

AU - Corbel, C.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indiacte that the monovacancy or its immediate surroundings is negatively charged.

AB - A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indiacte that the monovacancy or its immediate surroundings is negatively charged.

U2 - 10.1103/PhysRevLett.65.3329

DO - 10.1103/PhysRevLett.65.3329

M3 - Article

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SN - 0031-9007

VL - 65

SP - 3329

EP - 3332

JO - Physical Review Letters

JF - Physical Review Letters

IS - 26

ER -

Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation

Résumé

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