Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

T. Laine; K. Saarinen; J. Mäkinen; P. Hautojärvi; C. Corbel; M. J. Ashwin; R. C. Newman

doi:10.1063/1.119417

Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

T. Laine
, K. Saarinen
, J. Mäkinen
, P. Hautojärvi
, C. Corbel
, M. J. Ashwin
, R. C. Newman

Aalto University
Institut National des Sciences et Techniques Nucléaires
Imperial College London

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

langue originale	Anglais
Pages (de - à)	1843-1845
Nombre de pages	3
journal	Applied Physics Letters
Volume	71
Numéro de publication	13
Les DOIs	https://doi.org/10.1063/1.119417
état	Publié - 29 sept. 1997
Modification externe	Oui

Accès au document

10.1063/1.119417

Contient cette citation

@article{67db830835894f1092beae85d1a7435d,

title = "Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs",

abstract = "Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.",

author = "T. Laine and K. Saarinen and J. M{\"a}kinen and P. Hautoj{\"a}rvi and C. Corbel and Ashwin, \{M. J.\} and Newman, \{R. C.\}",

year = "1997",

month = sep,

day = "29",

doi = "10.1063/1.119417",

language = "English",

volume = "71",

pages = "1843--1845",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "13",

}

TY - JOUR

T1 - Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

AU - Laine, T.

AU - Saarinen, K.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Ashwin, M. J.

AU - Newman, R. C.

PY - 1997/9/29

Y1 - 1997/9/29

N2 - Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

AB - Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

U2 - 10.1063/1.119417

DO - 10.1063/1.119417

M3 - Article

AN - SCOPUS:0012829965

SN - 0003-6951

VL - 71

SP - 1843

EP - 1845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

Résumé

Accès au document

Empreinte digitale

Contient cette citation