Observation of the linear stark effect in a single acceptor in Si

L. E. Calvet; R. G. Wheeler; M. A. Reed

doi:10.1103/PhysRevLett.98.096805

Observation of the linear stark effect in a single acceptor in Si

L. E. Calvet
, R. G. Wheeler
, M. A. Reed

Université Paris-Saclay
Yale University

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.

langue originale	Anglais
Numéro d'article	096805
journal	Physical Review Letters
Volume	98
Numéro de publication	9
Les DOIs	https://doi.org/10.1103/PhysRevLett.98.096805
état	Publié - 2 mars 2007
Modification externe	Oui

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10.1103/PhysRevLett.98.096805

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title = "Observation of the linear stark effect in a single acceptor in Si",

abstract = "The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.",

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AB - The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.

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Observation of the linear stark effect in a single acceptor in Si

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