Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

S. Tüzemen; C. Le Berre; C. Corbel; M. R. Brozel; M. Yildirim

doi:10.1063/1.117252

Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

S. Tüzemen
, C. Le Berre
, C. Corbel
, M. R. Brozel
, M. Yildirim

Institut National des Sciences et Techniques Nucléaires
University of Atatürk
University of Manchester

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

3 Citations (Scopus)

Résumé

We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

langue originale	Anglais
Pages (de - à)	3462-3464
Nombre de pages	3
journal	Applied Physics Letters
Volume	69
Numéro de publication	23
Les DOIs	https://doi.org/10.1063/1.117252
état	Publié - 2 déc. 1996
Modification externe	Oui

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title = "Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation",

abstract = "We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.",

author = "S. T{\"u}zemen and \{Le Berre\}, C. and C. Corbel and Brozel, \{M. R.\} and M. Yildirim",

year = "1996",

month = dec,

day = "2",

doi = "10.1063/1.117252",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

AU - Tüzemen, S.

AU - Le Berre, C.

AU - Corbel, C.

AU - Brozel, M. R.

AU - Yildirim, M.

PY - 1996/12/2

Y1 - 1996/12/2

N2 - We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

AB - We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

U2 - 10.1063/1.117252

DO - 10.1063/1.117252

M3 - Article

AN - SCOPUS:0030566563

SN - 0003-6951

VL - 69

SP - 3462

EP - 3464

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

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