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On the electrical activity of the (1̄11)-(1̄12) steps in the silico Σ = 3 twin boundary

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Résumé

Electron beam induced current (EBIC) measurements, using the scanning electron microscope, have been performed on a Σ = 3 twin boundary with (1̄11) - (11̄2) steps in silicon. The two interface planes, together with the two different dislocations at their intersections, frequently show no detectable electrical activity. Such an activity however appears when the step density is high. In this case, transmission electron microscopy (TEM) shows that a large proportion of the step dislocations is decorated by nano-precipitates.

langue originaleAnglais
Pages (de - à)581-586
Nombre de pages6
journalJournal de physique. Colloque
VolumeC1
Numéro de publication1
étatPublié - 1 janv. 1990
EvénementProceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr
Durée: 4 sept. 19898 sept. 1989

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