Optical and electronic properties of hydrogenated amorphous silicon films deposited by square-wave modulated RF discharges of silane-he mixtures

The optoelectronic properties of a-Si: H films deposited under very different plasma conditions have been studied as functions of the square-wave modulation frequency of a 13.56 MHz rf discharge. Results for two extreme deposition conditions are presented. At both high and low deposition rates, the modulation of the rf discharge results in a negligible effect or a deterioration of the film properties, particularly the photoconductivity which we have found to be the most sensitive parameter. At high deposition rates, modulation of the discharge at 10 Hz results in the incorporation of particles into the film which produce enhanced absorption in the film. Therefore, for our reactor configuration, the modulation of the discharge does not produce an improvement but rather a degradation of the film properties.