Optical detection of spin-filter effect for electron spin polarimetry

We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices.