Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters

Frédéric Grillot; Heming Huang; Kevin Schires; Tagir Sadeev; Dejan Arsenijevic; Dieter Bimberg

doi:10.1117/12.2230235

Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters

Frédéric Grillot
, Heming Huang
, Kevin Schires
, Tagir Sadeev
, Dejan Arsenijevic
, Dieter Bimberg

Université Paris-Saclay
University of New Mexico
TU Berlin
King Abdulaziz University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Frequency conversion using highly non-degenerate four-wave mixing is reported in InAs/GaAs quantum-dot Fabry- Perot lasers. In order to compress the spontaneous emission noise, the laser is optically injection-locked. Under proper injection conditions, the beating between the injected light frequency and the cavity resonant frequency dominates the dynamic behavior and enhances a carrier modulation resonance at frequencies higher than the relaxation oscillation frequency. Conversion efficiencies as high as -12 dB associated to a large optical signal-to-noise ratio of 36 dB are reported. The conversion bandwidth is extended up to 2.1 THz for down-conversion (resp. 3.2 THz for up-conversion) with a quasi-symmetrical response between up- and down-converted signals.

langue originale	Anglais
titre	Semiconductor Lasers and Laser Dynamics VII
rédacteurs en chef	Angel Valle, Rainer Michalzik, Krassimir Panajotov, Marc Sciamanna
Editeur	SPIE
ISBN (Electronique)	9781510601376
Les DOIs	https://doi.org/10.1117/12.2230235
état	Publié - 1 janv. 2016
Modification externe	Oui
Evénement	Semiconductor Lasers and Laser Dynamics VII - Brussels, Belgique Durée: 4 avr. 2016 → 7 avr. 2016

Série de publications

Nom	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9892
ISSN (imprimé)	0277-786X
ISSN (Electronique)	1996-756X

Une conférence

Une conférence	Semiconductor Lasers and Laser Dynamics VII
Pays/Territoire	Belgique
La ville	Brussels
période	4/04/16 → 7/04/16

Accès au document

10.1117/12.2230235

Contient cette citation

Grillot, F., Huang, H., Schires, K., Sadeev, T., Arsenijevic, D., & Bimberg, D. (2016). Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters. Dans A. Valle, R. Michalzik, K. Panajotov, & M. Sciamanna (eds.), Semiconductor Lasers and Laser Dynamics VII Article 98920T (Proceedings of SPIE - The International Society for Optical Engineering; Vol 9892). SPIE. https://doi.org/10.1117/12.2230235

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title = "Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters",

abstract = "Frequency conversion using highly non-degenerate four-wave mixing is reported in InAs/GaAs quantum-dot Fabry- Perot lasers. In order to compress the spontaneous emission noise, the laser is optically injection-locked. Under proper injection conditions, the beating between the injected light frequency and the cavity resonant frequency dominates the dynamic behavior and enhances a carrier modulation resonance at frequencies higher than the relaxation oscillation frequency. Conversion efficiencies as high as -12 dB associated to a large optical signal-to-noise ratio of 36 dB are reported. The conversion bandwidth is extended up to 2.1 THz for down-conversion (resp. 3.2 THz for up-conversion) with a quasi-symmetrical response between up- and down-converted signals.",

author = "Fr{\'e}d{\'e}ric Grillot and Heming Huang and Kevin Schires and Tagir Sadeev and Dejan Arsenijevic and Dieter Bimberg",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Semiconductor Lasers and Laser Dynamics VII ; Conference date: 04-04-2016 Through 07-04-2016",

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Grillot, F, Huang, H, Schires, K, Sadeev, T, Arsenijevic, D & Bimberg, D 2016, Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters. Dans A Valle, R Michalzik, K Panajotov & M Sciamanna (eds), Semiconductor Lasers and Laser Dynamics VII., 98920T, Proceedings of SPIE - The International Society for Optical Engineering, VOL. 9892, SPIE, Semiconductor Lasers and Laser Dynamics VII, Brussels, Belgique, 4/04/16. https://doi.org/10.1117/12.2230235

Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters. / Grillot, Frédéric; Huang, Heming; Schires, Kevin et al.
Semiconductor Lasers and Laser Dynamics VII. Ed. / Angel Valle; Rainer Michalzik; Krassimir Panajotov; Marc Sciamanna. SPIE, 2016. 98920T (Proceedings of SPIE - The International Society for Optical Engineering; Vol 9892).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters

AU - Grillot, Frédéric

AU - Huang, Heming

AU - Schires, Kevin

AU - Sadeev, Tagir

AU - Arsenijevic, Dejan

AU - Bimberg, Dieter

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Frequency conversion using highly non-degenerate four-wave mixing is reported in InAs/GaAs quantum-dot Fabry- Perot lasers. In order to compress the spontaneous emission noise, the laser is optically injection-locked. Under proper injection conditions, the beating between the injected light frequency and the cavity resonant frequency dominates the dynamic behavior and enhances a carrier modulation resonance at frequencies higher than the relaxation oscillation frequency. Conversion efficiencies as high as -12 dB associated to a large optical signal-to-noise ratio of 36 dB are reported. The conversion bandwidth is extended up to 2.1 THz for down-conversion (resp. 3.2 THz for up-conversion) with a quasi-symmetrical response between up- and down-converted signals.

AB - Frequency conversion using highly non-degenerate four-wave mixing is reported in InAs/GaAs quantum-dot Fabry- Perot lasers. In order to compress the spontaneous emission noise, the laser is optically injection-locked. Under proper injection conditions, the beating between the injected light frequency and the cavity resonant frequency dominates the dynamic behavior and enhances a carrier modulation resonance at frequencies higher than the relaxation oscillation frequency. Conversion efficiencies as high as -12 dB associated to a large optical signal-to-noise ratio of 36 dB are reported. The conversion bandwidth is extended up to 2.1 THz for down-conversion (resp. 3.2 THz for up-conversion) with a quasi-symmetrical response between up- and down-converted signals.

U2 - 10.1117/12.2230235

DO - 10.1117/12.2230235

M3 - Conference contribution

AN - SCOPUS:84988433388

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Semiconductor Lasers and Laser Dynamics VII

A2 - Valle, Angel

A2 - Michalzik, Rainer

A2 - Panajotov, Krassimir

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PB - SPIE

T2 - Semiconductor Lasers and Laser Dynamics VII

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Grillot F, Huang H, Schires K, Sadeev T, Arsenijevic D, Bimberg D. Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters. Dans Valle A, Michalzik R, Panajotov K, Sciamanna M, rédacteurs en chef, Semiconductor Lasers and Laser Dynamics VII. SPIE. 2016. 98920T. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2230235

Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters

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