Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Pérot lasers emitting at 1.3m

D. Y. Cong; A. Martinez; K. Merghem; G. Moreau; A. Lemaître; J. G. Provost; O. Le Gouezigou; M. Fischer; I. Krestnikov; A. R. Kovsh; A. Ramdane

doi:10.1049/el:20073633

Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Pérot lasers emitting at 1.3m

D. Y. Cong
, A. Martinez
, K. Merghem
, G. Moreau
, A. Lemaître
, J. G. Provost
, O. Le Gouezigou
, M. Fischer
, I. Krestnikov
, A. R. Kovsh
, A. Ramdane

CNRS
Alcatel-Thales III-V Laboratory
Nanoplus Nanosystems and Technologies GmbH
NL Nanosemiconductor GmbH

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

19 Citations (Scopus)

Résumé

Dynamic measurements of the Henry factor α_H of InAs/GaAs Fabry-Pérot lasers are compared for 3-, 5- and 10-QD layers. While α_H dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.

langue originale	Anglais
Pages (de - à)	222-224
Nombre de pages	3
journal	Electronics Letters
Volume	43
Numéro de publication	4
Les DOIs	https://doi.org/10.1049/el:20073633
état	Publié - 26 févr. 2007

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10.1049/el:20073633

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title = "Optimisation of α-factor for quantum dot InAs/GaAs Fabry-P{\'e}rot lasers emitting at 1.3m",

abstract = "Dynamic measurements of the Henry factor αH of InAs/GaAs Fabry-P{\'e}rot lasers are compared for 3-, 5- and 10-QD layers. While αH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.",

author = "Cong, \{D. Y.\} and A. Martinez and K. Merghem and G. Moreau and A. Lema{\^i}tre and Provost, \{J. G.\} and Gouezigou, \{O. Le\} and M. Fischer and I. Krestnikov and Kovsh, \{A. R.\} and A. Ramdane",

year = "2007",

month = feb,

day = "26",

doi = "10.1049/el:20073633",

language = "English",

volume = "43",

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journal = "Electronics Letters",

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TY - JOUR

T1 - Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Pérot lasers emitting at 1.3m

AU - Cong, D. Y.

AU - Martinez, A.

AU - Merghem, K.

AU - Moreau, G.

AU - Lemaître, A.

AU - Provost, J. G.

AU - Gouezigou, O. Le

AU - Fischer, M.

AU - Krestnikov, I.

AU - Kovsh, A. R.

AU - Ramdane, A.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - Dynamic measurements of the Henry factor αH of InAs/GaAs Fabry-Pérot lasers are compared for 3-, 5- and 10-QD layers. While αH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.

AB - Dynamic measurements of the Henry factor αH of InAs/GaAs Fabry-Pérot lasers are compared for 3-, 5- and 10-QD layers. While αH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.

U2 - 10.1049/el:20073633

DO - 10.1049/el:20073633

M3 - Article

AN - SCOPUS:33847123575

SN - 0013-5194

VL - 43

SP - 222

EP - 224

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Pérot lasers emitting at 1.3m

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