Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy

F. Laruelle; J. Bloch

doi:10.1016/0022-0248(93)90730-K

Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy

F. Laruelle
, J. Bloch

École Polytechnique

CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We investigate optical properties of quantum wells grown by migration enhanced epitaxy (MEE) at high temperature (580°C). Our results suggest that Ga droplets that form during the MEE cycle strongly degrade the interface quality. Quantum wells grown by MEE avoiding the formation of Ga droplets exhibit very good optical properties.

langue originale	Anglais
Pages (de - à)	774-776
Nombre de pages	3
journal	Journal of Crystal Growth
Volume	127
Numéro de publication	1-4
Les DOIs	https://doi.org/10.1016/0022-0248(93)90730-K
état	Publié - 2 févr. 1993

Accès au document

10.1016/0022-0248(93)90730-K

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

@article{f060b6ee2687475e9a3db6edb3a83efb,

title = "Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy",

abstract = "We investigate optical properties of quantum wells grown by migration enhanced epitaxy (MEE) at high temperature (580°C). Our results suggest that Ga droplets that form during the MEE cycle strongly degrade the interface quality. Quantum wells grown by MEE avoiding the formation of Ga droplets exhibit very good optical properties.",

author = "F. Laruelle and J. Bloch",

year = "1993",

month = feb,

day = "2",

doi = "10.1016/0022-0248(93)90730-K",

language = "English",

volume = "127",

pages = "774--776",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1-4",

}

TY - JOUR

T1 - Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy

AU - Laruelle, F.

AU - Bloch, J.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We investigate optical properties of quantum wells grown by migration enhanced epitaxy (MEE) at high temperature (580°C). Our results suggest that Ga droplets that form during the MEE cycle strongly degrade the interface quality. Quantum wells grown by MEE avoiding the formation of Ga droplets exhibit very good optical properties.

AB - We investigate optical properties of quantum wells grown by migration enhanced epitaxy (MEE) at high temperature (580°C). Our results suggest that Ga droplets that form during the MEE cycle strongly degrade the interface quality. Quantum wells grown by MEE avoiding the formation of Ga droplets exhibit very good optical properties.

UR - https://www.scopus.com/pages/publications/0027904740

U2 - 10.1016/0022-0248(93)90730-K

DO - 10.1016/0022-0248(93)90730-K

M3 - Article

AN - SCOPUS:0027904740

SN - 0022-0248

VL - 127

SP - 774

EP - 776

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation