Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

Y. Poissant; P. Roca I Cabarrocas

doi:10.1016/s0022-3093(99)00917-5

Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

Y. Poissant
, P. Roca I Cabarrocas

Institut polytechnique de Paris

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

langue originale	Anglais
Pages (de - à)	1134-1139
Nombre de pages	6
journal	Journal of Non-Crystalline Solids
Volume	266-269 B
Les DOIs	https://doi.org/10.1016/s0022-3093(99)00917-5
état	Publié - 1 mai 2000
Evénement	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, États-Unis Durée: 23 août 1999 → 27 août 1999

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10.1016/s0022-3093(99)00917-5

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@article{d1d10758637f4b3dad919162a56767d4,

title = "Optimizing phosphorous and boron doped layers for stable p-i-n solar cells",

abstract = "Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1\%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.",

author = "Y. Poissant and \{Roca I Cabarrocas\}, P.",

year = "2000",

month = may,

day = "1",

doi = "10.1016/s0022-3093(99)00917-5",

language = "English",

volume = "266-269 B",

pages = "1134--1139",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

note = "18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - JOUR

T1 - Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

AU - Poissant, Y.

AU - Roca I Cabarrocas, P.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

AB - Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

UR - https://www.scopus.com/pages/publications/0006356808

U2 - 10.1016/s0022-3093(99)00917-5

DO - 10.1016/s0022-3093(99)00917-5

M3 - Conference article

AN - SCOPUS:0006356808

SN - 0022-3093

VL - 266-269 B

SP - 1134

EP - 1139

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

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