TY - GEN
T1 - Optoelectronic characterization of polycrystalline solar cells using time-resolved biased luminescence techniques
AU - El Hajje, G.
AU - Ory, D.
AU - Paire, M.
AU - Guillemoles, J. F.
AU - Lombez, L.
N1 - Publisher Copyright:
© 2015 SPIE.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - This study aims to provide an innovative insight on polycrystalline solar cells characterization. Accurate and complete information on the material's performance is achieved by probing micrometric fluctuations of its charge carriers' transport properties which might influence the global device's performance[1][2]. Results on microcrystalline Cu(In,Ga)Se2 solar cells absorbers[3] exhibited an initial fast decay followed by a slower one. Short decay lifetimes varying between 0.4 ns and 1.8 ns, were found to be linked to recombination centers, whereas longer decay lifetimes fluctuating between 3ns and 8ns, were associated with the presence of shallow emission traps. By varying the excitation wavelength from 850nm to 450nm excitation, the authors observed a hysteresis phenomenon regarding the behavior of TRPL decays as a function of the value order of the excitation wavelength. This is related to the activation of metastable defects located at the absorber/buffer interface.
AB - This study aims to provide an innovative insight on polycrystalline solar cells characterization. Accurate and complete information on the material's performance is achieved by probing micrometric fluctuations of its charge carriers' transport properties which might influence the global device's performance[1][2]. Results on microcrystalline Cu(In,Ga)Se2 solar cells absorbers[3] exhibited an initial fast decay followed by a slower one. Short decay lifetimes varying between 0.4 ns and 1.8 ns, were found to be linked to recombination centers, whereas longer decay lifetimes fluctuating between 3ns and 8ns, were associated with the presence of shallow emission traps. By varying the excitation wavelength from 850nm to 450nm excitation, the authors observed a hysteresis phenomenon regarding the behavior of TRPL decays as a function of the value order of the excitation wavelength. This is related to the activation of metastable defects located at the absorber/buffer interface.
KW - Time-resolved photoluminescence
KW - carrier dynamics
KW - electronic transport properties
KW - metastable defects
KW - optoelectronic characterization
KW - polycrystalline solar cells
KW - thin films
UR - https://www.scopus.com/pages/publications/84930038609
U2 - 10.1117/12.2076942
DO - 10.1117/12.2076942
M3 - Conference contribution
AN - SCOPUS:84930038609
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
A2 - Sugiyama, Masakazu
A2 - Freundlich, Alexandre
A2 - Guillemoles, Jean-Francois
PB - SPIE
T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Y2 - 10 February 2015 through 12 February 2015
ER -