@inproceedings{1f9d00732ba8422f98f915509f4a1959,
title = "Optoelectronic properties of a-Si:H films deposited from He-diluted silane",
abstract = "In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.",
author = "C. Swiatkowski and \{Roca i Cabarrocas\}, P. and M. Kunst",
year = "1993",
month = jan,
day = "1",
doi = "10.1557/proc-297-73",
language = "English",
isbn = "155899193X",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "73--78",
booktitle = "Amorphous Silicon Technology",
note = "Proceedings of the MRS Spring Meeting ; Conference date: 13-04-1993 Through 16-04-1993",
}