Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices

U. Rau; D. Braunger; R. Herberholz; H. W. Schock; J. F. Guillemoles; L. Kronik; David Cahen

doi:10.1063/1.370758

Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se₂ films and devices

U. Rau
, D. Braunger
, R. Herberholz
, H. W. Schock
, J. F. Guillemoles
, L. Kronik
, David Cahen

University of Suttgart
PSL University
Weizmann Institute of Science Israel

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se₂ (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.

langue originale	Anglais
Pages (de - à)	497-505
Nombre de pages	9
journal	Journal of Applied Physics
Volume	86
Numéro de publication	1
Les DOIs	https://doi.org/10.1063/1.370758
état	Publié - 1 janv. 1999
Modification externe	Oui

Accès au document

10.1063/1.370758

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title = "Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices",

abstract = "Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se2 (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.",

author = "U. Rau and D. Braunger and R. Herberholz and Schock, \{H. W.\} and Guillemoles, \{J. F.\} and L. Kronik and David Cahen",

year = "1999",

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doi = "10.1063/1.370758",

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T1 - Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices

AU - Rau, U.

AU - Braunger, D.

AU - Herberholz, R.

AU - Schock, H. W.

AU - Guillemoles, J. F.

AU - Kronik, L.

AU - Cahen, David

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se2 (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.

AB - Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se2 (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.

UR - https://www.scopus.com/pages/publications/0032614581

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DO - 10.1063/1.370758

M3 - Article

AN - SCOPUS:0032614581

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VL - 86

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1