Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se2 thin film solar cells via reusable solutions

Serena Gallanti; Nicolas Loones; Elisabeth Chassaing; Muriel Bouttemy; Arnaud Etcheberry; Thibaud Hildebrandt; Daniel Lincot; Negar Naghavi

Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions

Serena Gallanti
, Nicolas Loones
, Elisabeth Chassaing
, Muriel Bouttemy
, Arnaud Etcheberry
, Thibaud Hildebrandt
, Daniel Lincot
, Negar Naghavi

Institut Photovoltaïque d'Ile-de-France
Institut Lavoisier de Versailles

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

A new bath composition for ZnS buffer layer deposition is presented allowing its photochemical growth on CIGSe absorbers. The main advantages of this solution compared to classical CBD-Zn(S,O) bath are: the deposition occurs at room temperature, the concentration of chemical precursors is 10 times lower than classical CBD-Zn(S,O), the use of a complexing agent such as ammonia is avoided and the same bath can be reused for several depositions. The same bath can be re-used for at least 4 times, leading to efficiencies between 13 and 14%, which is similar to what is obtained with CdS-buffered references.

langue originale	Anglais
titre	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	110-116
Nombre de pages	7
ISBN (Electronique)	9781509056057
état	Publié - 1 janv. 2017
Evénement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, États-Unis Durée: 25 juin 2017 → 30 juin 2017

Série de publications

Nom	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Une conférence

Une conférence	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Pays/Territoire	États-Unis
La ville	Washington
période	25/06/17 → 30/06/17

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Contient cette citation

Gallanti, S., Loones, N., Chassaing, E., Bouttemy, M., Etcheberry, A., Hildebrandt, T., Lincot, D., & Naghavi, N. (2017). Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (p. 110-116). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc..

Gallanti, Serena ; Loones, Nicolas ; Chassaing, Elisabeth et al. / Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 110-116 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{e6c5f04634964b819480c86b1b1f107c,

title = "Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se2 thin film solar cells via reusable solutions",

abstract = "A new bath composition for ZnS buffer layer deposition is presented allowing its photochemical growth on CIGSe absorbers. The main advantages of this solution compared to classical CBD-Zn(S,O) bath are: the deposition occurs at room temperature, the concentration of chemical precursors is 10 times lower than classical CBD-Zn(S,O), the use of a complexing agent such as ammonia is avoided and the same bath can be reused for several depositions. The same bath can be re-used for at least 4 times, leading to efficiencies between 13 and 14\%, which is similar to what is obtained with CdS-buffered references.",

keywords = "Buffer layer, Cd-free, Cu(In, Electrodeposition, Ga)Se, Photochemical deposition, ZnS",

author = "Serena Gallanti and Nicolas Loones and Elisabeth Chassaing and Muriel Bouttemy and Arnaud Etcheberry and Thibaud Hildebrandt and Daniel Lincot and Negar Naghavi",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "110--116",

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}

Gallanti, S, Loones, N, Chassaing, E, Bouttemy, M, Etcheberry, A, Hildebrandt, T, Lincot, D & Naghavi, N 2017, Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., p. 110-116, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, États-Unis, 25/06/17.

Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions. / Gallanti, Serena; Loones, Nicolas; Chassaing, Elisabeth et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 110-116 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se2 thin film solar cells via reusable solutions

AU - Gallanti, Serena

AU - Loones, Nicolas

AU - Chassaing, Elisabeth

AU - Bouttemy, Muriel

AU - Etcheberry, Arnaud

AU - Hildebrandt, Thibaud

AU - Lincot, Daniel

AU - Naghavi, Negar

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A new bath composition for ZnS buffer layer deposition is presented allowing its photochemical growth on CIGSe absorbers. The main advantages of this solution compared to classical CBD-Zn(S,O) bath are: the deposition occurs at room temperature, the concentration of chemical precursors is 10 times lower than classical CBD-Zn(S,O), the use of a complexing agent such as ammonia is avoided and the same bath can be reused for several depositions. The same bath can be re-used for at least 4 times, leading to efficiencies between 13 and 14%, which is similar to what is obtained with CdS-buffered references.

AB - A new bath composition for ZnS buffer layer deposition is presented allowing its photochemical growth on CIGSe absorbers. The main advantages of this solution compared to classical CBD-Zn(S,O) bath are: the deposition occurs at room temperature, the concentration of chemical precursors is 10 times lower than classical CBD-Zn(S,O), the use of a complexing agent such as ammonia is avoided and the same bath can be reused for several depositions. The same bath can be re-used for at least 4 times, leading to efficiencies between 13 and 14%, which is similar to what is obtained with CdS-buffered references.

KW - Buffer layer

KW - Cd-free

KW - Cu(In

KW - Electrodeposition

KW - Ga)Se

KW - Photochemical deposition

KW - ZnS

M3 - Conference contribution

AN - SCOPUS:85048475674

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 110

EP - 116

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Gallanti S, Loones N, Chassaing E, Bouttemy M, Etcheberry A, Hildebrandt T et al. Photochemical deposition of ZnS buffer layers for Cu(In,Ga)Se₂ thin film solar cells via reusable solutions. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 110-116. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).